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    SOLID-STATE IMAGING ELEMENT AND MANUFACTURING METHOD THEREOF
    2.
    发明公开
    SOLID-STATE IMAGING ELEMENT AND MANUFACTURING METHOD THEREOF 审中-公开

    公开(公告)号：US20240313013A1

    公开(公告)日：2024-09-19

    申请号：US18676161

    申请日：2024-05-28

    申请人： SONY GROUP CORPORATION

    发明人： Masahiro JOEI ,  Kenichi MURATA ,  Fumihiko KOGA ,  Iwao YAGI ,  Shintarou HIRATA ,  Hideaki TOGASHI ,  Yosuke SAITO

    IPC分类号： H01L27/146 ,  H01L29/41 ,  H04N25/771 ,  H10K39/32

    CPC分类号： H01L27/14612 ,  H01L27/14636 ,  H01L27/14685 ,  H01L29/41 ,  H04N25/771 ,  H10K39/32

    摘要： A solid-state imaging element with pixel transistors and wires capable of efficiently outputting and transferring a pixel signal from a stacked photoelectric conversion film while suppressing an increase in manufacturing cost, and a manufacturing method thereof are provided. There is provided a solid-state imaging element which includes a semiconductor substrate; a first photoelectric conversion unit provided on the semiconductor substrate; and a control unit provided stacked with the first photoelectric conversion unit and including a plurality of pixel transistors, in which the first photoelectric conversion unit includes a second electrode, a first photoelectric conversion film provided above the second electrode and converting light into charges, and a first electrode provided on the first photoelectric conversion film, the plurality of pixel transistors include an amplification transistor that amplifies and outputs the charges as a pixel signal, and a channel formation region of the amplification transistor made of an oxide semiconductor layer.

    SOLID-STATE IMAGING DEVICE
    4.
    发明公开
    SOLID-STATE IMAGING DEVICE 审中-公开

    公开(公告)号：US20240290816A1

    公开(公告)日：2024-08-29

    申请号：US18570713

    申请日：2022-03-11

    申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION

    发明人： YUTA NAKAMOTO

    IPC分类号： H01L27/146 ,  H04N25/618 ,  H04N25/771

    CPC分类号： H01L27/14643 ,  H01L27/14603 ,  H01L27/14612 ,  H04N25/618 ,  H04N25/771

    摘要： Noise is reduced. A solid-state imaging device includes a photoelectric conversion unit that generates charge corresponding to an amount of received light, a transfer unit that transfers the charge generated by the photoelectric conversion unit, a charge storage unit that stores the charge transferred by the transfer unit, an amplifying transistor that amplifies a signal corresponding to the charge stored in the charge storage unit, and an isolation portion that isolates the photoelectric conversion unit, the amplifying transistor has a gate electrode including two vertical gate electrode portions provided in a depth-wise direction from a first surface of a semiconductor layer to sandwich a channel region therebetween, the isolation portion includes at least a first isolation portion provided in a first groove provided in the depth-wise direction from the first surface, and an insulating layer provided on a side of one of the two vertical gate electrode portions opposite to the channel region is provided to overlap at least a part of the first isolation portion when viewed in the depth-wise direction.

    IMAGING APPARATUS AND AN IMAGING SYSTEM INCLUDING THE IMAGING APPARATUS
    5.
    发明公开
    IMAGING APPARATUS AND AN IMAGING SYSTEM INCLUDING THE IMAGING APPARATUS 审中-公开

    公开(公告)号：US20240251185A1

    公开(公告)日：2024-07-25

    申请号：US18370417

    申请日：2023-09-20

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Youngtae JANG

    IPC分类号： H04N25/771 ,  H04N25/75 ,  H04N25/766

    CPC分类号： H04N25/771 ,  H04N25/75 ,  H04N25/766

    摘要： An imaging apparatus including: a lens configured to squeeze a real image to generate a squeezed image having a first aspect ratio; and an image sensor including pixels and configured to capture the squeezed image and generate image data corresponding to a final image having a second aspect ratio greater than the first aspect ratio, the squeezed image includes subregions respectively corresponding to the pixels, each of the pixels includes: a first photoelectric conversion element configured to generate a first photocharge packet; a second photoelectric conversion element configured to generate a second photocharge packet; and a floating diffusion node connected to the first photoelectric conversion element and the second photoelectric conversion element, the final image includes: a first pixel section corresponding to a first pixel signal based on the first photocharge packet; and a second pixel section corresponding to a second pixel signal based on the second photocharge packet.

    Image sensor
    7.
    发明授权
    Image sensor 有权

    公开(公告)号：US12022221B2

    公开(公告)日：2024-06-25

    申请号：US17991097

    申请日：2022-11-21

    申请人： Samsung Electronics Co., Ltd.

    发明人： Changhyun Park ,  Eun Sub Shim

    IPC分类号： H04N25/77 ,  H04N25/46 ,  H04N25/59 ,  H04N25/771 ,  H04N25/773 ,  H04N25/78

    CPC分类号： H04N25/77 ,  H04N25/771 ,  H04N25/773

    摘要： An image sensor includes a pixel including a first floating diffusion and a second floating diffusion, generating a first pixel signal based on a quantity of charge of the first floating diffusion, and generating a second pixel signal based on the quantity of charge of the first floating diffusion and a quantity of charge of the second floating diffusion; a column line connected to the pixel and transmitting the first pixel signal or the second pixel signal; and a readout circuit connected to the column line and generating an image signal based on a plurality of comparison results including a first comparison result obtained by comparing the first pixel signal with a first reference signal, a second comparison result obtained by comparing the second pixel signal with a first reference signal, and a third comparison result obtained by comparing the second pixel signal with a second reference signal.

    Imaging apparatus and electronic device
    9.
    发明授权
    Imaging apparatus and electronic device 有权

    公开(公告)号：US12003873B2

    公开(公告)日：2024-06-04

    申请号：US17732925

    申请日：2022-04-29

    申请人： Sony Semiconductor Solutions Corporation

    发明人： Luonghung Asakura

    IPC分类号： H04N25/59 ,  H01L27/146 ,  H04N25/46 ,  H04N25/75 ,  H04N25/76 ,  H04N25/771

    CPC分类号： H04N25/59 ,  H01L27/14641 ,  H04N25/46 ,  H04N25/75 ,  H04N25/76 ,  H04N25/771 ,  H01L27/1464

    摘要： A first and second pixel units that perform FD addition are provided. The first pixel unit includes: a first switch transistor of which one source/drain electrode is connected to an FD; and a reset transistor that is connected between another source/drain electrode of the first switch transistor and a power supply node. The second pixel unit includes: a second switch transistor of which one source/drain electrode is connected to an FD; a third switch transistor of which one source/drain electrode is connected to another source/drain electrode of the second switch transistor; and a capacitive element that is connected between another source/drain electrode of the third switch transistor and a reference potential node. The respective other source/drain electrodes of the first switch transistor and the second switch transistor are electrically connected with each other.

    IMAGE SENSOR AND IMAGE CAPTURING APPARATUS
    10.
    发明公开
    IMAGE SENSOR AND IMAGE CAPTURING APPARATUS 审中-公开

    公开(公告)号：US20240171879A1

    公开(公告)日：2024-05-23

    申请号：US18500331

    申请日：2023-11-02

    申请人： CANON KABUSHIKI KAISHA

    发明人： Shunichi WAKASHIMA ,  Koichi FUKUDA

    IPC分类号： H04N25/771 ,  H04N25/11 ,  H04N25/704

    CPC分类号： H04N25/771 ,  H04N25/11 ,  H04N25/704

    摘要： An image sensor includes a plurality of pixels, and each pixel comprises: a microlens; a plurality of photoelectric conversion units that convert incident light into charge and accumulate the charge; a plurality of holding units that hold signals corresponding to the charge; a controller that controls timings of accumulating the charge converted by the plurality of photoelectric conversion units and timings of causing the plurality of holding units to hold the signals corresponding to the charge; and an output unit that outputs the signals held in the plurality of holding units in units of one row. The plurality of pixels include a plurality of first pixels having the plurality of photoelectric conversion units arranged in a first direction and a plurality of second pixels having the plurality of photoelectric conversion units arranged in a second direction which is perpendicular to the first direction.