公开(公告)号：US20250037777A1

公开(公告)日：2025-01-30

申请号：US18753133

申请日：2024-06-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyojin Ahn ,  Seoyeong Lee ,  Jungho Lee ,  Sungjun Hong

IPC: G11C16/34 ,  G11C16/26

Abstract: According to the inventive concept, a memory device may receive a pass voltage signal set in advance from a host and perform a verification operation with respect to a memory cell array based on the received pass voltage signal. The memory device includes an aggressor word line on which a read operation is performed, and a memory block including a victim word line adjacent to the aggressor word line, and a change in a read voltage with respect to the memory block is recorded and the recorded change in the read voltage is sent to the host.