公开(公告)号：US12135897B2

公开(公告)日：2024-11-05

申请号：US18137036

申请日：2023-04-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyojin Ahn ,  Seoyeong Lee ,  Dongwoo Shin ,  Changjun Lee

IPC: G06F3/06

Abstract: An operating method of a storage device including a memory controller and a non-volatile memory, the method including: performing a first read in response to a read request by reading data from the non-volatile memory using a default read voltage set; and performing a second read when the first read fails, by calculating a degradation compensation level, using a weight table, offset table, and displacement level, calculating a history read voltage set by performing an operation on the default read voltage set and degradation compensation level, and reading the data using the history read voltage set, wherein the weight table includes weights preset according to word line groups and state read voltages, the offset table includes offset levels preset according to the word line groups and the state read voltages, and the displacement level corresponds to a difference between a default read voltage level and an optimal read voltage level.

公开(公告)号：US20250037777A1

公开(公告)日：2025-01-30

申请号：US18753133

申请日：2024-06-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyojin Ahn ,  Seoyeong Lee ,  Jungho Lee ,  Sungjun Hong

IPC: G11C16/34 ,  G11C16/26

Abstract: According to the inventive concept, a memory device may receive a pass voltage signal set in advance from a host and perform a verification operation with respect to a memory cell array based on the received pass voltage signal. The memory device includes an aggressor word line on which a read operation is performed, and a memory block including a victim word line adjacent to the aggressor word line, and a change in a read voltage with respect to the memory block is recorded and the recorded change in the read voltage is sent to the host.

公开(公告)号：US20240069790A1

公开(公告)日：2024-02-29

申请号：US18137036

申请日：2023-04-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyojin AHN ,  Seoyeong Lee ,  Dongwoo Shin ,  Changjun Lee

IPC: G06F3/06

CPC classification number: G06F3/0655 ,  G06F3/0604 ,  G06F3/0679

Abstract: An operating method of a storage device including a memory controller and a non-volatile memory, the method including: performing a first read in response to a read request by reading data from the non-volatile memory using a default read voltage set; and performing a second read when the first read fails, by calculating a degradation compensation level, using a weight table, offset table, and displacement level, calculating a history read voltage set by performing an operation on the default read voltage set and degradation compensation level, and reading the data using the history read voltage set, wherein the weight table includes weights preset according to word line groups and state read voltages, the offset table includes offset levels preset according to the word line groups and the state read voltages, and the displacement level corresponds to a difference between a default read voltage level and an optimal read voltage level.

公开(公告)号：US12189965B2

公开(公告)日：2025-01-07

申请号：US18215320

申请日：2023-06-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyojin Ahn ,  Seoyeong Lee ,  Hoon Jo

IPC: G06F12/00 ,  G06F3/06 ,  G11C16/04 ,  G11C16/08 ,  G11C16/26 ,  H10B43/27

Abstract: In some embodiments, an operating method of a storage device includes obtaining a plurality of points by searching for a first valley point between threshold voltage distributions of selection memory cells coupled to a selection word line of a plurality of word lines; calculating, using a first function, a first voltage level that corresponds to a first reference count value; calculating, using a second function, a second voltage level that corresponds to the first reference count value; classifying the selection memory cells into a plurality of coupling patterns according to an aggressor cell group of each of adjacent memory cells coupled to at least one adjacent word line adjacent to the selection word line; and performing a read operation, based on the plurality of coupling patterns of the selection memory cells, the first voltage level, and the second voltage level.

公开(公告)号：US20240126453A1

公开(公告)日：2024-04-18

申请号：US18215320

申请日：2023-06-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyojin Ahn ,  Seoyeong Lee ,  Hoon Jo

IPC: G06F3/06 ,  G11C16/04 ,  G11C16/08 ,  G11C16/26

CPC classification number: G06F3/0619 ,  G06F3/0659 ,  G06F3/0679 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/26 ,  H10B43/27

Abstract: In some embodiments, an operating method of a storage device includes obtaining a plurality of points by searching for a first valley point between threshold voltage distributions of selection memory cells coupled to a selection word line of a plurality of word lines; calculating, using a first function, a first voltage level that corresponds to a first reference count value; calculating, using a second function, a second voltage level that corresponds to the first reference count value; classifying the selection memory cells into a plurality of coupling patterns according to an aggressor cell group of each of adjacent memory cells coupled to at least one adjacent word line adjacent to the selection word line; and performing a read operation, based on the plurality of coupling patterns of the selection memory cells, the first voltage level, and the second voltage level.