公开(公告)号：US20220171420A1

公开(公告)日：2022-06-02

申请号：US17385010

申请日：2021-07-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeongpyo PARK ,  TAE-HWANG KONG ,  JUNHYEOK YANG ,  JOOSEONG KIM

IPC: G05F3/26 ,  G05F1/46

Abstract: An electronic device including: a reference voltage generator circuit to generate a reference voltage based on a first and second voltage, the reference voltage generator circuit including: a first current source to supply a first current to each of a first and second node; an amplifier to amplify a difference between the first voltage of the first node and the second voltage of the second node and to output a difference voltage corresponding to the amplified difference; a first bipolar junction transistor (BJT) connected to the first node; a first resistor connected to the second node; a second BJT connected between the first resistor and ground; a second resistor connected between the second node and ground; and a first transistor to be supplied with a second current from the first current source; and an adaptive cascode circuit to generate a bias voltage applied to a gate of the first transistor.

公开(公告)号：US20220100218A1

公开(公告)日：2022-03-31

申请号：US17315621

申请日：2021-05-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： DONGHOON JUNG ,  TAE-HWANG KONG ,  SANGHO KIM ,  JUNHYEOK YANG ,  Jeongpyo PARK

IPC: G05F1/575 ,  H02M3/07

Abstract: Disclosed is an electronic device, which includes an amplifier circuit that receives a feedback voltage and a reference voltage and amplifies a difference between the feedback voltage and the reference voltage to output an amplified difference voltage, an analog-to-digital converter that converts the amplified difference voltage to a digital code including two or more bits, and low-dropout (LDO) regulators that outputs output voltages based on the digital code. Each of the LDO regulators includes power transistors outputting a corresponding output voltage of the output voltages, drives one of the power transistors in a switching state, and drives each of remaining power transistors in a turned-on state or a turned-off state.

公开(公告)号：US20240019886A1

公开(公告)日：2024-01-18

申请号：US18374028

申请日：2023-09-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeongpyo PARK ,  TAE-HWANG KONG ,  JUNHYEOK YANG ,  JOOSEONG KIM

IPC: G05F3/26 ,  G05F1/46

CPC classification number: G05F3/267 ,  G05F1/461 ,  G05F1/468

Abstract: An electronic device including: a reference voltage generator circuit to generate a reference voltage based on a first and second voltage, the reference voltage generator circuit including: a first current source to supply a first current to each of a first and second node; an amplifier to amplify a difference between the first voltage of the first node and the second voltage of the second node and to output a difference voltage corresponding to the amplified difference; a first bipolar junction transistor (BJT) connected to the first node; a first resistor connected to the second node; a second BJT connected between the first resistor and ground; a second resistor connected between the second node and ground; and a first transistor to be supplied with a second current from the first current source; and an adaptive cascode circuit to generate a bias voltage applied to a gate of the first transistor.

公开(公告)号：US20230223844A1

公开(公告)日：2023-07-13

申请号：US18153446

申请日：2023-01-12

Applicant: Samsung Electronics Co., Ltd. ,  KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： JUNHYEOK YANG ,  JEONG-HYUN CHO ,  JEONGPYO PARK ,  TAE-HWANG KONG ,  HYUN-SIK KIM ,  HONG-HYUN BAE

IPC: H02M3/07 ,  H02M3/158

CPC classification number: H02M3/07 ,  H02M3/158

Abstract: A semiconductor device may include: a flying capacitor connected between a first node and a second node; a first inductor having a first end connected to the flying capacitor through the first node and a second end connected to an output node; and a second inductor having a first end connected to the flying capacitor through the second node and a second end connected to the output node, wherein the semiconductor device is configurable in a plurality of different states based on a plurality of different operational phases, and wherein the flying capacitor is configured to float in a first phase, is configured to be discharged through the first inductor in a second phase that is different from the first phase, and is configured to be charged through the second inductor in a third phase that is different from the first phase and the second phase.