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公开(公告)号:US11344206B2
公开(公告)日:2022-05-31
申请号:US16713925
申请日:2019-12-13
Applicant: Samsung Electronics Co., Ltd.
Inventor: Atsuya Yokoi , Tadamasa Murakami , Toshihiro Kitajima , Edwardo Murakami
IPC: A61B5/0205 , A61B5/053 , A61B5/00 , G06F21/32 , A61B5/024 , H04R1/10 , H04R3/04 , H03F3/183 , G06F21/31
Abstract: An electronic device is provided. The electronic device includes an earphone including a first impedance component, a signal generator configured to output a first alternating current (AC) signal, a first circuit including at least one first analog device having an impedance component electrically coupled to the first impedance component, and configured to receive the first AC signal and output a first detection signal including a voltage component corresponding to the first impedance component, and at least one processor configured to generate at least one piece of biometric information, based on the first detection signal, and output the at least one piece of biometric information.
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公开(公告)号:US11043919B2
公开(公告)日:2021-06-22
申请号:US16522866
申请日:2019-07-26
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Toshihiko Yoshimasu , Tadamasa Murakami , Tsuyoshi Sugiura
Abstract: A power amplifier includes a first bias circuit including a first and third transistor, a first sub-bias circuit, and an amplifying circuit including a fourth transistor. In the first bias circuit, a second terminal of the first transistor and a second terminal of the first sub-bias circuit are grounded, a control terminal of the first transistor is connected to a control terminal of the first sub-bias circuit, a first terminal of the first sub-bias circuit is connected to a constant voltage terminal, a first terminal of the first transistor is connected to a second terminal of the third transistor, a first terminal of the third transistor is connected to a control terminal of the third transistor. The amplifying circuit amplifies an input signal power based on a first bias signal from the first bias circuit to a control terminal of the fourth transistor.
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公开(公告)号:US20200036340A1
公开(公告)日:2020-01-30
申请号:US16522866
申请日:2019-07-26
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Toshihiko Yoshimasu , Tadamasa Murakami , Tsuyoshi Sugiura
Abstract: A power amplifier includes a first bias circuit including a first and third transistor, a first sub-bias circuit, and an amplifying circuit including a fourth transistor. In the first bias circuit, a second terminal of the first transistor and a second terminal of the first sub-bias circuit are grounded, a control terminal of the first transistor is connected to a control terminal of the first sub-bias circuit, a first terminal of the first sub-bias circuit is connected to a constant voltage terminal, a first terminal of the first transistor is connected to a second terminal of the third transistor, a first terminal of the third transistor is connected to a control terminal of the third transistor. The amplifying circuit amplifies an input signal power based on a first bias signal from the first bias circuit to a control terminal of the fourth transistor.
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