公开(公告)号：US08987797B2

公开(公告)日：2015-03-24

申请号：US14050744

申请日：2013-10-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Oh-Kyum Kwon ,  Tae-Jung Lee ,  Kyoung-Eun Uhm ,  Byung-Sun Kim

IPC: H01L27/108 ,  H01L27/11 ,  H01L29/78 ,  H01L27/115 ,  H01L29/94

CPC classification number: H01L29/78 ,  H01L27/11519 ,  H01L27/11521 ,  H01L27/11529 ,  H01L27/11558 ,  H01L29/94

Abstract: A nonvolatile memory device has a first active region and a second active region defined in a substrate by a device isolation layer, a Metal Oxide Silicon Field-Effect Transistor (MOSFET) disposed on the first active region and including a first electrode pattern, and a Metal Oxide Silicon (MOS) capacitor disposed on the second active region and including a second electrode pattern, and in which the first electrode pattern is narrower in the widthwise direction of the channel of the MOSFET than the first active region.

Abstract translation: 非易失性存储器件具有通过器件隔离层在衬底中限定的第一有源区和第二有源区，设置在第一有源区上并包括第一电极图的金属氧化物半导体场效应晶体管（MOSFET） 金属氧化物硅（MOS）电容器，其设置在第二有源区并且包括第二电极图案，并且其中第一电极图案在MOSFET的沟道的宽度方向上比第一有源区域窄。

公开(公告)号：US20140035017A1

公开(公告)日：2014-02-06

申请号：US14050744

申请日：2013-10-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Oh-Kyum Kwon ,  Tae-Jung Lee ,  Kyoung-Eun Uhn ,  Byung-Sun Kim

IPC: H01L29/78 ,  H01L29/94

CPC classification number: H01L29/78 ,  H01L27/11519 ,  H01L27/11521 ,  H01L27/11529 ,  H01L27/11558 ,  H01L29/94

Abstract: A nonvolatile memory device has a first active region and a second active region defined in a substrate by a device isolation layer, a Metal Oxide Silicon Field-Effect Transistor (MOSFET) disposed on the first active region and including a first electrode pattern, and a Metal Oxide Silicon (MOS) capacitor disposed on the second active region and including a second electrode pattern, and in which the first electrode pattern is narrower in the widthwise direction of the channel of the MOSFET than the first active region.

Abstract translation: 非易失性存储器件具有通过器件隔离层在衬底中限定的第一有源区和第二有源区，设置在第一有源区上并包括第一电极图的金属氧化物半导体场效应晶体管（MOSFET） 金属氧化物硅（MOS）电容器，其设置在第二有源区并且包括第二电极图案，并且其中第一电极图案在MOSFET的沟道的宽度方向上比第一有源区域窄。