公开(公告)号：US20140299934A1

公开(公告)日：2014-10-09

申请号：US14194837

申请日：2014-03-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seok-Hoon KIM ,  Tae-Ouk KWON ,  Su-Jin JUNG ,  Young-Pil KIM ,  Byeong-Chan LEE ,  Bon-Young KOO

IPC: H01L29/78

CPC classification number: H01L29/7848 ,  H01L29/66545 ,  H01L29/785

Abstract: Provided is a semiconductor device. The semiconductor device includes a fin on a substrate; a gate electrode cross the fin on the substrate; a source/drain formed on at least one of both sides of the gate electrode, and including a first film and a second film; and a stress film arranged between an isolation film on the substrate and the source/drain, and formed on a side surface of the fin.

Abstract translation: 提供一种半导体器件。 半导体器件在衬底上包括翅片; 栅电极跨越衬底上的翅片; 源极/漏极，形成在栅电极的两侧中的至少一个上，并且包括第一膜和第二膜; 以及布置在基板上的隔离膜和源极/漏极之间并且形成在鳍的侧表面上的应力膜。