公开(公告)号：US20200343364A1

公开(公告)日：2020-10-29

申请号：US16572681

申请日：2019-09-17

申请人： Samsung Electronics Co., Ltd.

发明人： Donghyun KIM ,  Inhyun SONG ,  Yeongmin JEON ,  Sejin PARK ,  Juyun PARK ,  Jonghoon BAEK ,  Taeyeon SHIN ,  Sooyeon JEONG

IPC分类号： H01L29/66 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/78

摘要： A semiconductor device may include: a dummy gate structure including a first gate pattern in which dummy gate lines extending in one direction are connected to each other on a substrate, and a second gate pattern in which dummy gate lines extending in the one direction are connected to each other on the same line with the first gate pattern; and a third gate pattern extending in parallel with the dummy gate structure on one side of the dummy gate structure.