公开(公告)号：US20240021615A1

公开(公告)日：2024-01-18

申请号：US18163573

申请日：2023-02-02

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Yoonjeong KIM ,  Yeongmin JEON ,  Hyewon JANG

IPC分类号： H01L27/092 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/775 ,  H01L21/8238 ,  H01L29/66

CPC分类号： H01L27/092 ,  H01L29/0673 ,  H01L29/41733 ,  H01L29/42392 ,  H01L29/775 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/66545 ,  H01L29/66439

摘要： A semiconductor device having active regions including a first active region and a second active region parallel to each other and respectively extending on a substrate in a first horizontal direction, a field region defining the active regions, a first insulating structure extending in the first horizontal direction on the field region, a gate structure extending, in a second horizontal direction, to intersect the active regions and the first insulating structure, source/drain regions disposed on at least one side of the gate structure, the source/drain regions including first source/drain regions on the first active region and second source/drain regions on the second active region, and a common contact plug on a first side of the gate structure and connected to the first and second source/drain regions opposing each other. The first insulating structure includes a first portion overlapping the gate structure in a vertical direction.

公开(公告)号：US20200343364A1

公开(公告)日：2020-10-29

申请号：US16572681

申请日：2019-09-17

申请人： Samsung Electronics Co., Ltd.

发明人： Donghyun KIM ,  Inhyun SONG ,  Yeongmin JEON ,  Sejin PARK ,  Juyun PARK ,  Jonghoon BAEK ,  Taeyeon SHIN ,  Sooyeon JEONG

IPC分类号： H01L29/66 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/78

摘要： A semiconductor device may include: a dummy gate structure including a first gate pattern in which dummy gate lines extending in one direction are connected to each other on a substrate, and a second gate pattern in which dummy gate lines extending in the one direction are connected to each other on the same line with the first gate pattern; and a third gate pattern extending in parallel with the dummy gate structure on one side of the dummy gate structure.