公开(公告)号：US20250164617A1

公开(公告)日：2025-05-22

申请号：US18406133

申请日：2024-01-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yibing Michelle WANG ,  Tze Ching FUNG ,  Alfonso Cesar Barredo ALBASON ,  Chunji WANG

IPC: G01S7/4914 ,  G01S7/481 ,  G01S7/4915 ,  G01S7/497 ,  G01S17/14

Abstract: Provided are systems, methods, and apparatuses for up and down counting for efficient laser spot finding in LiDAR. In one or more examples, the systems, devices, and methods include dividing a pixel array into multiple macro blocks, a first macro block including at least a first pixel and a second pixel of the pixel array and initializing a first photon counter of the first pixel and a second photon counter of the second pixel. The systems, devices, and methods include determining an ambient photon count of the first photon counter based on performing a set number of ambient cycles with a laser transmitter off, determining a laser photon count of the first photon counter with the laser transmitter on, and using the first pixel to perform a time-of-flight measurement based on the first pixel being selected according to the ambient photon count and the laser photon count.

公开(公告)号：US20240322051A1

公开(公告)日：2024-09-26

申请号：US18477480

申请日：2023-09-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tze Ching FUNG ,  Yibing Michelle WANG ,  Hongyu WANG ,  Eunchul KANG

IPC: H01L31/02 ,  H01L27/146 ,  H01L31/107

CPC classification number: H01L31/02027 ,  H01L27/14612 ,  H01L27/14636 ,  H01L27/14643 ,  H01L31/107

Abstract: An output circuit for a single-photon avalanche diode. In some embodiments, a system includes: a first sensing element; a bus line; a first pull-down circuit; a first pull-up element; and a second pull-up element, the first pull-up element, the second pull-up element, and the first pull-down circuit being connected to the bus line, the first pull-down circuit being connected to the first sensing element and configured to be activated based on a signal from the first sensing element, the first pull-up element having a lower drive strength than the first pull-down circuit.

公开(公告)号：US20240153983A1

公开(公告)日：2024-05-09

申请号：US18096012

申请日：2023-01-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tze Ching FUNG ,  Yibing Michelle WANG

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/14612 ,  H01L27/1463 ,  H01L27/14636

Abstract: A pixel cell for a CMOS image sensor includes an isolation structure that isolates a pixel transistor region from a pixel photodiode region. On a front side of the image sensor, the isolation structure includes a first shallow trench isolation (STI) structure, a second STI structure and a semiconductor region between the first STI structure and the second STI structure, and an implant region formed from a p-type semiconductor that is in contact with the semiconductor region and extends toward a backside of the image sensor. The semiconductor region is formed from the first type semiconductor. On a backside of the image sensor, the isolation structure includes a trench isolation structure extending from the backside toward the front side and that contacts the implant region.