公开(公告)号：US12022212B2

公开(公告)日：2024-06-25

申请号：US17571682

申请日：2022-01-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ha Na Choi ,  Hong Hyun Jeon ,  Ji Eun Lee ,  Won Chul Choi

IPC: H04N25/46 ,  H01L23/00 ,  H01L27/146 ,  H04N25/11 ,  H04N25/75

CPC classification number: H04N25/46 ,  H01L24/08 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H04N25/11 ,  H04N25/75 ,  H01L2224/08145

Abstract: An image sensor includes a pixel group. The pixel group includes a first color filter, first to third photodiodes below the first color filter such that the first color filter overlaps each of the first to third third photodiodes in a vertical direction, wherein the first to third photodiodes are arranged in a first direction perpendicular to the vertical direction, first to third floating diffusions configured to accumulate electric charges generated by the first to third photodiodes, respectively, a source follower transistor configured to output a first pixel signal based on the electric charges accumulated in at least one of the first to third floating diffusions, and a first metal layer configured to receive the first pixel signal from the source follower transistor, wherein the first metal layer extends in a second direction intersecting the first direction, wherein the first to third floating diffusions are arranged in the first direction.