公开(公告)号：US20240404863A1

公开(公告)日：2024-12-05

申请号：US18407872

申请日：2024-01-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwang Yong YU ,  Woo Jeong SHIN ,  Il Hwan KIM ,  Chang Min PARK ,  Hee Sun JUN

IPC: H01L21/683 ,  H01L21/56 ,  H01L21/768 ,  H01L23/522

Abstract: A method for fabricating a semiconductor device may include forming a first substrate including a first surface and a second surface, which may be opposite each other, forming a first semiconductor element on the first surface, adhering the first substrate onto a second substrate so that an upper surface of the second substrate faces the first surface of the first substrate, removing an edge region of the first substrate, forming a passivation layer surrounding first sides of the first substrate, and forming a second semiconductor element on the second surface of the first substrate. The passivation layer may not be formed on the second surface of the first substrate.