公开(公告)号：US20250107087A1

公开(公告)日：2025-03-27

申请号：US18740580

申请日：2024-06-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wooyoung Lee ,  Junghwan Lee

IPC: H10B43/27 ,  H10B41/27

Abstract: A semiconductor device includes: a stack structure including gate electrodes that are spaced apart from each other in a first direction, perpendicular to an upper surface of a substrate, in a first region and a second region; separation regions extending through the stack structure and extending in a second direction, perpendicular to the first direction, in the first region and the second region; a plurality of channel structures extending through the stack structure, in a cell region of the first region; a plurality of dummy channel structures extending through the stack structure, in a buffer region of the first region; and a plurality of support structures extending through the stack structure, in the second region. The first region and the second region are sequentially arranged in the second direction. The separation regions include a first separation region and a second separation region, adjacent to each other in a third direction, and perpendicular to the first direction and the second direction. Between the first and second separation regions, the dummy channel structures include a first dummy group adjacent to the cell region and including first dummy channel structures sequentially arranged in the third direction, and a second dummy group adjacent to the second region and including second dummy channel structures sequentially arranged in the third direction. A first length of the first dummy group in the third direction is longer than a second length of the second dummy group in the third direction.