公开(公告)号：US20210057536A1

公开(公告)日：2021-02-25

申请号：US16829372

申请日：2020-03-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： DOOHYUN LEE ,  HEONJONG SHIN ,  MINCHAN GWAK ,  HYUNHO PARK ,  SUNGHUN JUNG ,  YONGSIK JEONG ,  SANGWON JEE ,  INCHAN HWANG

IPC: H01L29/45 ,  H01L27/092 ,  H01L29/06 ,  H01L29/08 ,  H01L29/417 ,  H01L29/423 ,  H01L29/786 ,  H01L21/8238 ,  H01L29/66

Abstract: A semiconductor device including: a substrate that includes a first active region and a second active region; a first source/drain pattern on the first active region; a second source/drain pattern on the second active region; a separation dielectric pattern on the substrate between the first source/drain pattern and the second source/drain pattern; and a first contact pattern on the first source/drain pattern, wherein the first contact pattern includes: a first metal pattern; a first barrier pattern between the first metal pattern and the first source/drain pattern; and a second barrier pattern between the first barrier pattern and the first source/drain pattern, wherein the first barrier pattern contacts the separation dielectric pattern and extends along a sidewall of the first metal pattern adjacent to the separation dielectric pattern.

公开(公告)号：US20220310809A1

公开(公告)日：2022-09-29

申请号：US17841873

申请日：2022-06-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Doohyun Lee ,  HYUN-SEUNG SONG ,  YEONGCHANG ROH ,  HEONJONG SHIN ,  SORA YOU ,  YONGSIK JEONG

IPC: H01L29/417 ,  H01L29/49 ,  H01L23/535 ,  H01L29/08 ,  H01L29/423 ,  H01L23/532

Abstract: A semiconductor device comprising a gate electrode on a substrate, a source/drain pattern on the substrate on a side of the gate electrode, and a gate contact plug on the gate electrode are disclosed. The gate contact plug may include a first gate contact segment, and a second gate contact segment that extends in a vertical direction from a top surface of the first gate contact segment. An upper width of the first gate contact segment may be greater than a lower width of the second gate contact segment.

公开(公告)号：US20220020860A1

公开(公告)日：2022-01-20

申请号：US17488443

申请日：2021-09-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： DOOHYUN LEE ,  HEONJONG SHIN ,  MINCHAN GWAK ,  HYUNHO PARK ,  SUNGHUN JUNG ,  YONGSIK JEONG ,  SANGWON JEE ,  INCHAN HWANG

IPC: H01L29/45 ,  H01L29/66 ,  H01L29/06 ,  H01L29/08 ,  H01L29/417 ,  H01L29/423 ,  H01L29/786 ,  H01L21/8238 ,  H01L27/092

Abstract: A semiconductor device including: a substrate that includes a first active region and a second active region; a first source/drain pattern on the first active region; a second source/drain pattern on the second active region; a separation dielectric pattern on the substrate between the first source/drain pattern and the second source/drain pattern; and a first contact pattern on the first source/drain pattern, wherein the first contact pattern includes: a first metal pattern; a first barrier pattern between the first metal pattern and the first source/drain pattern; and a second barrier pattern between the first barrier pattern and the first source/drain pattern, wherein the first barrier pattern contacts the separation dielectric pattern and extends along a sidewall of the first metal pattern adjacent to the separation dielectric pattern.