公开(公告)号：US20220320083A1

公开(公告)日：2022-10-06

申请号：US17844807

申请日：2022-06-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： MUNHYEON KIM ,  YOUNGCHAI JUNG ,  MINGYU KIM ,  SEON-BAE KIM ,  YEONHO PARK

IPC: H01L27/088 ,  H01L29/06 ,  H01L29/78

Abstract: A semiconductor device includes a substrate with an active region being provided with a channel pattern, a device isolation layer including a first part defining the active region and a second part surrounding a first portion of the channel pattern, an upper epitaxial pattern disposed on an upper surface of the channel pattern, a gate electrode surrounding a second portion of the channel pattern and extending in a first direction, a gate spacer on the gate electrode, an interlayer dielectric layer on the gate spacer, and an air gap between a bottom surface of the gate electrode and the second part of the device isolation layer. At least a portion of the air gap vertically overlaps the gate electrode. The second portion of the channel pattern is higher than the first portion of the channel pattern.