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公开(公告)号:US11126238B2
公开(公告)日:2021-09-21
申请号:US16588179
申请日:2019-09-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Dae Ok Kim , In Hae Kang , Min Seok Ko , Yang Woo Roh , In Hwan Doh , Jong Won Lee , Se Jeong Jang
Abstract: An open channel solid state drive includes a flash memory including a first block and a controller which controls the flash memory, the controller receiving write data and a physical address of the first block from a host and attempting a write of the data in the first block. The controller generates first data which is not written in the first block among the write data when a power-off occurs during writing attempt. The write data includes the first data and second data already written in the first block. The controller determines whether successive writing of the first data in the first block is possible or impossible. If the successive writing is possible, the controller successively writes the data in the first block. If the successive writing is impossible, the host or the controller writes the first data and the second data in a second block of the flash memory.
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公开(公告)号:US11803223B2
公开(公告)日:2023-10-31
申请号:US17473522
申请日:2021-09-13
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Dae Ok Kim , In Hae Kang , Min Seok Ko , Yang Woo Roh , In Hwan Doh , Jong Won Lee , Se Jeong Jang
CPC classification number: G06F1/305 , G06F3/064 , G06F3/0617 , G06F3/0688 , G06F12/0246
Abstract: An open channel solid state drive includes a flash memory including a first block and a controller which controls the flash memory, the controller receiving write data and a physical address of the first block from a host and attempting a write of the data in the first block. The controller generates first data which is not written in the first block among the write data when a power-off occurs during writing attempt. The write data includes the first data and second data already written in the first block. The controller determines whether successive writing of the first data in the first block is possible or impossible. If the successive writing is possible, the controller successively writes the data in the first block. If the successive writing is impossible, the host or the controller writes the first data and the second data in a second block of the flash memory.
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公开(公告)号:US11789652B2
公开(公告)日:2023-10-17
申请号:US17387011
申请日:2021-07-28
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Bum Hoe Koo , Jae Sub Kim , Yang Woo Roh , Dong Heon Ryu
IPC: G06F12/08 , G06F12/0808 , G06F12/0815 , G06F3/06
CPC classification number: G06F3/0659 , G06F3/0611 , G06F3/0683
Abstract: A storage device includes a non-volatile memory; a plurality of cores; a host interface configured to receive a first set command, an I/O command, and an ADMIN command from a host; and a storage controller including a command distribution module configured to be set to a first state according to the first set command, and distribute the I/O command to the plurality of cores according to the set first state. Each of the plurality of cores may be configured to perform an operation instructed by the I/O command and an operation instructed by the ADMIN command on the non-volatile memory in response to the distributed I/O command.
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公开(公告)号:US11842075B2
公开(公告)日:2023-12-12
申请号:US17411440
申请日:2021-08-25
Applicant: Samsung Electronics Co., Ltd.
Inventor: Yun Seok Kang , Jae Sub Kim , Yang Woo Roh , Jeong Beom Seo , Kyung Wook Ye
IPC: G06F3/06
CPC classification number: G06F3/0659 , G06F3/0604 , G06F3/0679
Abstract: A storage device comprises a nonvolatile memory configured to store data that is written in size units of a mapping size, and a storage controller configured to transmit a command to the nonvolatile memory. The storage controller includes a host interface configured to receive a write command from a host device, the write command including a command to write first data to a first address, the first data having a first size smaller than the mapping size. The storage controller includes processing circuitry configured to transmit a read command to the nonvolatile memory, to cause the nonvolatile memory to read second data stored in the nonvolatile memory addressed based on the first address, in response to a determination that the first size is smaller than the mapping size and before the first data is received at the storage controller through the host interface.
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公开(公告)号:US20210405724A1
公开(公告)日:2021-12-30
申请号:US17473522
申请日:2021-09-13
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: DAE OK KIM , In Hae Kang , Min Seok Ko , Yang Woo Roh , In Hwan Doh , Jong Won Lee , Se Jeong Jang
Abstract: An open channel solid state drive includes a flash memory including a first block and a controller which controls the flash memory, the controller receiving write data and a physical address of the first block from a host and attempting a write of the data in the first block. The controller generates first data which is not written in the first block among the write data when a power-off occurs during writing attempt. The write data includes the first data and second data already written in the first block. The controller determines whether successive writing of the first data in the first block is possible or impossible. If the successive writing is possible, the controller successively writes the data in the first block. If the successive writing is impossible, the host or the controller writes the first data and the second data in a second block of the flash memory.
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