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公开(公告)号:US20220164111A1
公开(公告)日:2022-05-26
申请号:US17120068
申请日:2020-12-11
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jingpei YANG , Jing YANG , Rekha PITCHUMANI , YangSeok Ki
IPC: G06F3/06
Abstract: A multi-stream solid-state device (SSD) includes a normal-access memory associated with a first stream ID, a high-access memory having a higher endurance than the normal-access memory and being associated with a second stream ID, a controller processor, and a processor memory coupled to the controller processor, wherein the processor memory has stored thereon instructions that, when executed by the controller processor, cause the controller processor to perform identifying a data stream ID of an input data stream as one of the first and second stream IDs, in response to identifying the data stream ID as the first stream ID, storing the input data stream in the normal-access memory, and in response to identifying the data stream ID as the second stream ID, storing the input data stream in the high-access memory.
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公开(公告)号:US20240168646A1
公开(公告)日:2024-05-23
申请号:US18426234
申请日:2024-01-29
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jingpei YANG , Jing YANG , Rekha PITCHUMANI , YangSeok Ki
IPC: G06F3/06
CPC classification number: G06F3/0613 , G06F3/0655 , G06F3/0679
Abstract: A multi-stream solid-state device (SSD) includes a normal-access memory associated with a first stream ID, a high-access memory having a higher endurance than the normal-access memory and being associated with a second stream ID, a controller processor, and a processor memory coupled to the controller processor, wherein the processor memory has stored thereon instructions that, when executed by the controller processor, cause the controller processor to perform identifying a data stream ID of an input data stream as one of the first and second stream IDs, in response to identifying the data stream ID as the first stream ID, storing the input data stream in the normal-access memory, and in response to identifying the data stream ID as the second stream ID, storing the input data stream in the high-access memory.
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公开(公告)号:US11907539B2
公开(公告)日:2024-02-20
申请号:US17120068
申请日:2020-12-11
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jingpei Yang , Jing Yang , Rekha Pitchumani , YangSeok Ki
IPC: G06F3/06
CPC classification number: G06F3/0613 , G06F3/0655 , G06F3/0679
Abstract: A multi-stream solid-state device (SSD) includes a normal-access memory associated with a first stream ID, a high-access memory having a higher endurance than the normal-access memory and being associated with a second stream ID, a controller processor, and a processor memory coupled to the controller processor, wherein the processor memory has stored thereon instructions that, when executed by the controller processor, cause the controller processor to perform identifying a data stream ID of an input data stream as one of the first and second stream IDs, in response to identifying the data stream ID as the first stream ID, storing the input data stream in the normal-access memory, and in response to identifying the data stream ID as the second stream ID, storing the input data stream in the high-access memory.
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