公开(公告)号：US20160111531A1

公开(公告)日：2016-04-21

申请号：US14723137

申请日：2015-05-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yaoqi Dong

IPC: H01L29/78 ,  H01L29/10 ,  H01L29/06 ,  H01L29/423 ,  H01L29/417

CPC classification number: H01L29/785 ,  H01L29/0653 ,  H01L29/1033 ,  H01L29/42376 ,  H01L29/4238

Abstract: A semiconductor device includes a semiconductor substrate, a fin-type structure on the semiconductor substrate, and a gate on a portion of a top surface and portions of two side surfaces of the fin-type structure. The gate has a first width at a first level from the top surface of the substrate and a second width at a second level from the top surface of the substrate that is lower than the first level. The first width is greater than the second width, and a width of the gate is reduced from the first width to the second width between the first level and the second level.

Abstract translation: 半导体器件包括半导体衬底，半导体衬底上的翅片型结构，以及鳍状结构的上表面的一部分和两个侧表面的部分的栅极。 栅极具有从衬底的顶表面起的第一水平的第一宽度和从低于第一水平的衬底顶表面开始的第二高度的第二宽度。 第一宽度大于第二宽度，并且栅极的宽度在第一层和第二层之间从第一宽度减小到第二宽度。

公开(公告)号：US08753945B2

公开(公告)日：2014-06-17

申请号：US13687104

申请日：2012-11-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keon-Yong Cheon ,  Dong-Won Kim ,  Sung-Man Lim ,  Sadaaki Masuoka ,  Yaoqi Dong

IPC: H01L21/336

CPC classification number: H01L29/78 ,  H01L21/823864 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833

Abstract: In a method of forming MOS transistor, a gate structure is formed on a substrate and a first spacer layer is formed on the substrate conformal to the gate structure. A second spacer layer is formed on the first spacer layer. A second spacer is formed on the first spacer layer corresponding to a sidewall of the gate structure by partially removing the second spacer layer from the first spacer layer. Impurities are implanted in the substrate by an ion implantation process using the gate structure including the first spacer layer and the second spacer as an ion implantation mask to form source/drain extension regions at surface portions of the substrate around the gate structure.

Abstract translation: 在形成MOS晶体管的方法中，在衬底上形成栅极结构，并且在与栅极结构一致的衬底上形成第一间隔层。 在第一间隔层上形成第二间隔层。 通过从第一间隔层部分去除第二间隔层，在对应于栅极结构的侧壁的第一间隔层上形成第二间隔物。 通过使用包括第一间隔层和第二间隔物的栅极结构作为离子注入掩模的离子注入工艺将杂质注入到衬底中，以在栅极结构周围的衬底的表面部分处形成源极/漏极延伸区域。