公开(公告)号：US20180254341A1

公开(公告)日：2018-09-06

申请号：US15970450

申请日：2018-05-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Dae Suk ,  Sunhom Steve Paak ,  Yeon-Ho Park ,  Dong-Ho Cha

IPC: H01L29/78 ,  H01L29/786 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/417

CPC classification number: H01L29/785 ,  H01L29/0673 ,  H01L29/41733 ,  H01L29/41775 ,  H01L29/4236 ,  H01L29/42392 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7856 ,  H01L29/78603 ,  H01L29/78696 ,  H01L2029/7858

Abstract: Semiconductor devices are provided. A semiconductor device includes a channel. The semiconductor device includes a gate structure having first and second portions. The channel is between the first and second portions of the gate structure. A contact structure is adjacent a portion of a side surface of the channel. Related methods of forming semiconductor devices are also provided.

公开(公告)号：US09991387B2

公开(公告)日：2018-06-05

申请号：US15172851

申请日：2016-06-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Dae Suk ,  Sunhom Steve Paak ,  Yeon-Ho Park ,  Dong-Ho Cha

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/423 ,  H01L29/417 ,  H01L29/786 ,  H01L29/06

CPC classification number: H01L29/785 ,  H01L29/0673 ,  H01L29/41733 ,  H01L29/41775 ,  H01L29/4236 ,  H01L29/42392 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7856 ,  H01L29/78603 ,  H01L29/78696 ,  H01L2029/7858

Abstract: Semiconductor devices are provided. A semiconductor device includes a channel. The semiconductor device includes a gate structure having first and second portions. The channel is between the first and second portions of the gate structure. A contact structure is adjacent a portion of a side surface of the channel. Related methods of forming semiconductor devices are also provided.

公开(公告)号：US10403754B2

公开(公告)日：2019-09-03

申请号：US15970450

申请日：2018-05-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Dae Suk ,  Sunhom Steve Paak ,  Yeon-Ho Park ,  Dong-Ho Cha

IPC: H01L29/78 ,  H01L29/786 ,  H01L29/06 ,  H01L29/423 ,  H01L29/417 ,  H01L29/66

Abstract: Semiconductor devices are provided. A semiconductor device includes a channel. The semiconductor device includes a gate structure having first and second portions. The channel is between the first and second portions of the gate structure. A contact structure is adjacent a portion of a side surface of the channel. Related methods of forming semiconductor devices are also provided.