公开(公告)号：US09991387B2

公开(公告)日：2018-06-05

申请号：US15172851

申请日：2016-06-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Dae Suk ,  Sunhom Steve Paak ,  Yeon-Ho Park ,  Dong-Ho Cha

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/423 ,  H01L29/417 ,  H01L29/786 ,  H01L29/06

CPC classification number: H01L29/785 ,  H01L29/0673 ,  H01L29/41733 ,  H01L29/41775 ,  H01L29/4236 ,  H01L29/42392 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7856 ,  H01L29/78603 ,  H01L29/78696 ,  H01L2029/7858

Abstract: Semiconductor devices are provided. A semiconductor device includes a channel. The semiconductor device includes a gate structure having first and second portions. The channel is between the first and second portions of the gate structure. A contact structure is adjacent a portion of a side surface of the channel. Related methods of forming semiconductor devices are also provided.

公开(公告)号：US11201086B2

公开(公告)日：2021-12-14

申请号：US16833885

申请日：2020-03-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Min Kim ,  Sunhom Steve Paak ,  Heon-Jong Shin ,  Dong-Ho Cha

IPC: H01L29/78 ,  H01L21/8234

Abstract: Semiconductor devices and methods of forming the semiconductor devices are provided. The methods may include forming a fin, forming a first device isolating layer on a side of the fin, forming a second device isolating layer extending through the first device isolating layer, forming first and second gates traversing the fin and forming a third device isolating layer between the first and second gates. The first device isolating layer may include a first material and a lowermost surface at a first depth. The second device isolating layer may include a second material and a lowermost surface at a second depth greater than the first depth. The third device isolating layer may extend into the fin, may include a lowermost surface at a third depth less than the first depth and a third material different from the first and the second materials.

公开(公告)号：US10147650B2

公开(公告)日：2018-12-04

申请号：US15211200

申请日：2016-07-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Min Kim ,  Ji-Su Kang ,  Byung-Chan Ryu ,  Jae-Hyun Park ,  Yu-Ri Lee ,  Dong-Ho Cha

IPC: H01L21/70 ,  H01L21/8238 ,  H01L29/78 ,  H01L29/08 ,  H01L29/161 ,  H01L29/16 ,  H01L29/165 ,  H01L27/092

Abstract: A semiconductor device includes a first fin-type pattern and a second fin-type pattern which protrude upwardly from an upper surface of a field insulating film and extend in a first direction. A gate structure intersects the first fin-type pattern and the second fin-type pattern. A first epitaxial layer is on the first fin-type pattern on at least one side of the gate structure, and a second epitaxial layer is on the second fin-type pattern on at least one side of the gate structure. A metal contact covers outer circumferential surfaces of the first epitaxial layer and the second epitaxial layer. The first epitaxial layer contacts the second epitaxial layer.

公开(公告)号：US10403754B2

公开(公告)日：2019-09-03

申请号：US15970450

申请日：2018-05-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Dae Suk ,  Sunhom Steve Paak ,  Yeon-Ho Park ,  Dong-Ho Cha

IPC: H01L29/78 ,  H01L29/786 ,  H01L29/06 ,  H01L29/423 ,  H01L29/417 ,  H01L29/66

Abstract: Semiconductor devices are provided. A semiconductor device includes a channel. The semiconductor device includes a gate structure having first and second portions. The channel is between the first and second portions of the gate structure. A contact structure is adjacent a portion of a side surface of the channel. Related methods of forming semiconductor devices are also provided.

公开(公告)号：US11876019B2

公开(公告)日：2024-01-16

申请号：US17523223

申请日：2021-11-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Min Kim ,  Sunhom Steve Paak ,  Heon-Jong Shin ,  Dong-Ho Cha

IPC: H01L27/088 ,  H01L21/8234

CPC classification number: H01L21/823431 ,  H01L21/823481

Abstract: Semiconductor devices and methods of forming the semiconductor devices are provided. The methods may include forming a fin, forming a first device isolating layer on a side of the fin, forming a second device isolating layer extending through the first device isolating layer, forming first and second gates traversing the fin and forming a third device isolating layer between the first and second gates. The first device isolating layer may include a first material and a lowermost surface at a first depth. The second device isolating layer may include a second material and a lowermost surface at a second depth greater than the first depth. The third device isolating layer may extend into the fin, may include a lowermost surface at a third depth less than the first depth and a third material different from the first and the second materials.

公开(公告)号：US20190051566A1

公开(公告)日：2019-02-14

申请号：US16162428

申请日：2018-10-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Min Kim ,  Ji-Su Kang ,  Byung-Chan Ryu ,  Jae-Hyun Park ,  Yu-Ri Lee ,  Dong-Ho Cha

IPC: H01L21/8238 ,  H01L29/16 ,  H01L29/78 ,  H01L29/165 ,  H01L29/161 ,  H01L29/08 ,  H01L27/092

Abstract: A semiconductor device includes a first fin-type pattern and a second fin-type pattern which protrude upwardly from an upper surface of a field insulating film and extend in a first direction. A gate structure intersects the first fin-type pattern and the second fin-type pattern. A first epitaxial layer is on the first fin-type pattern on at least one side of the gate structure, and a second epitaxial layer is on the second fin-type pattern on at least one side of the gate structure. A metal contact covers outer circumferential surfaces of the first epitaxial layer and the second epitaxial layer. The first epitaxial layer contacts the second epitaxial layer.

公开(公告)号：US20180254341A1

公开(公告)日：2018-09-06

申请号：US15970450

申请日：2018-05-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Dae Suk ,  Sunhom Steve Paak ,  Yeon-Ho Park ,  Dong-Ho Cha

IPC: H01L29/78 ,  H01L29/786 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/417

CPC classification number: H01L29/785 ,  H01L29/0673 ,  H01L29/41733 ,  H01L29/41775 ,  H01L29/4236 ,  H01L29/42392 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7856 ,  H01L29/78603 ,  H01L29/78696 ,  H01L2029/7858

Abstract: Semiconductor devices are provided. A semiconductor device includes a channel. The semiconductor device includes a gate structure having first and second portions. The channel is between the first and second portions of the gate structure. A contact structure is adjacent a portion of a side surface of the channel. Related methods of forming semiconductor devices are also provided.