公开(公告)号：US10103323B2

公开(公告)日：2018-10-16

申请号：US15704963

申请日：2017-09-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong-Seok Chung ,  Yoonjong Song ,  Yongkyu Lee ,  Gwanhyeob Koh

IPC: H01L21/302 ,  H01L43/12 ,  H01L21/266 ,  H01L21/027 ,  H01L27/22

Abstract: The inventive concepts provide a method for forming a hard mask pattern. The method includes forming a hard mask layer on an etch target layer disposed on a substrate, forming a photoresist pattern having an opening exposing one region of the hard mask layer, performing an oxygen ion implantation process on the one region using the photoresist pattern as a mask to form an oxidized portion in the one region, and patterning the hard mask layer using the oxidized portion as an etch mask.