公开(公告)号：US20200258976A1

公开(公告)日：2020-08-13

申请号：US16544088

申请日：2019-08-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinho PARK ,  Yongseung BANG ,  Jeong Hoon AHN

IPC: H01L49/02

Abstract: A semiconductor device includes a first lower pad and a second lower pad on a substrate, a first electrode being in contact with a top surface of the first lower pad, a second electrode disposed on the first electrode and being in contact with a top surface of the second lower pad, a dielectric layer between the first electrode and the second electrode, and a third electrode on the second electrode.

公开(公告)号：US20210296229A1

公开(公告)日：2021-09-23

申请号：US17340584

申请日：2021-06-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinho PARK ,  Shaofeng DING ,  Yongseung BANG ,  Jeong Hoon AHN

IPC: H01L23/522 ,  H01L49/02

Abstract: A semiconductor device includes a substrate, a first electrode including a first hole, a first dielectric layer on an upper surface of the first electrode and on an inner surface of the first hole, a second electrode on the first dielectric layer, a second dielectric layer on the second electrode, a third electrode on the second dielectric layer and including a second hole, and a first contact plug extending through the second electrode and the second dielectric layer and extending through the first hole and the second hole. A sidewall of the first contact plug is isolated from direct contact with the sidewall of the first hole and a sidewall of the second hole, and has a step portion located adjacent to an upper surface of the second electrode.

公开(公告)号：US20200350248A1

公开(公告)日：2020-11-05

申请号：US16660124

申请日：2019-10-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinho PARK ,  Shaofeng DING ,  Yongseung BANG ,  Jeong Hoon AHN

IPC: H01L23/535 ,  H01L27/108

Abstract: A semiconductor device includes a substrate, a first electrode including a first hole, a first dielectric layer on an upper surface of the first electrode and on an inner surface of the first hole, a second electrode on the first dielectric layer, a second dielectric layer on the second electrode, a third electrode on the second dielectric layer and including a second hole, and a first contact plug extending through the second electrode and the second dielectric layer and extending through the first hole and the second hole. A sidewall of the first contact plug is isolated from direct contact with the sidewall of the first hole and a sidewall of the second hole, and has a step portion located adjacent to an upper surface of the second electrode.