公开(公告)号：US20200258976A1

公开(公告)日：2020-08-13

申请号：US16544088

申请日：2019-08-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinho PARK ,  Yongseung BANG ,  Jeong Hoon AHN

IPC: H01L49/02

Abstract: A semiconductor device includes a first lower pad and a second lower pad on a substrate, a first electrode being in contact with a top surface of the first lower pad, a second electrode disposed on the first electrode and being in contact with a top surface of the second lower pad, a dielectric layer between the first electrode and the second electrode, and a third electrode on the second electrode.

公开(公告)号：US20200027437A1

公开(公告)日：2020-01-23

申请号：US16503990

申请日：2019-07-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinho PARK ,  Guiwon SEO ,  Jonghwa LEE ,  Hyeongcheol JEONG ,  Sungwon CHO

IPC: G10K11/178

Abstract: A method and audio apparatus for processing an audio signal are provided. The audio apparatus includes at least one microphone to acquire ambient sound of the audio apparatus, a speaker to output the audio signal, an air pressure regulator including a fluid tube connecting an external space of a housing of the audio apparatus to an internal space of the housing, and configured to adjust a change in an air pressure of the internal space of the housing and an audio signal processor configured to generate an anti-noise signal for canceling noise in the ambient sound by using the acquired ambient sound and output the generated anti-noise signal and the audio signal through the speaker.

公开(公告)号：US20210296229A1

公开(公告)日：2021-09-23

申请号：US17340584

申请日：2021-06-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinho PARK ,  Shaofeng DING ,  Yongseung BANG ,  Jeong Hoon AHN

IPC: H01L23/522 ,  H01L49/02

Abstract: A semiconductor device includes a substrate, a first electrode including a first hole, a first dielectric layer on an upper surface of the first electrode and on an inner surface of the first hole, a second electrode on the first dielectric layer, a second dielectric layer on the second electrode, a third electrode on the second dielectric layer and including a second hole, and a first contact plug extending through the second electrode and the second dielectric layer and extending through the first hole and the second hole. A sidewall of the first contact plug is isolated from direct contact with the sidewall of the first hole and a sidewall of the second hole, and has a step portion located adjacent to an upper surface of the second electrode.

公开(公告)号：US20200350248A1

公开(公告)日：2020-11-05

申请号：US16660124

申请日：2019-10-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinho PARK ,  Shaofeng DING ,  Yongseung BANG ,  Jeong Hoon AHN

IPC: H01L23/535 ,  H01L27/108

Abstract: A semiconductor device includes a substrate, a first electrode including a first hole, a first dielectric layer on an upper surface of the first electrode and on an inner surface of the first hole, a second electrode on the first dielectric layer, a second dielectric layer on the second electrode, a third electrode on the second dielectric layer and including a second hole, and a first contact plug extending through the second electrode and the second dielectric layer and extending through the first hole and the second hole. A sidewall of the first contact plug is isolated from direct contact with the sidewall of the first hole and a sidewall of the second hole, and has a step portion located adjacent to an upper surface of the second electrode.

公开(公告)号：US20240096991A1

公开(公告)日：2024-03-21

申请号：US18219232

申请日：2023-07-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaehyun LIM ,  Subin KIM ,  Jiwon OH ,  Jinho PARK ,  Joongwon JEON

IPC: H01L29/423 ,  H01L27/088 ,  H01L29/06 ,  H01L29/775

CPC classification number: H01L29/42376 ,  H01L27/088 ,  H01L27/0886 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/775

Abstract: A semiconductor device includes a substrate including first and second regions; a first active fin extending in a first direction on the first region; a second active fin extending in the first direction on the second region; an isolation pattern on the substrate between the first and second regions; a first gate structure on the first active fin, extending in a second direction perpendicular to the first direction, and onto an upper surface of the isolation pattern; and a second gate structure on the second active fin, extending in the second direction, and onto the upper surface of the isolation pattern, wherein the first gate structure includes a first portion having a first width and a second portion having a second width that is less than the first width, and the second gate structure includes a third portion having the first width and a fourth portion having the second width.