公开(公告)号：US20180033890A1

公开(公告)日：2018-02-01

申请号：US15728965

申请日：2017-10-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong-hee Park ,  Young-Seok Song ,  Ji-Soo Chang ,  Young-Chul Hwang

IPC: H01L29/78 ,  H01L27/088 ,  H01L29/66 ,  H01L27/092 ,  H01L21/8234

CPC classification number: H01L29/7856 ,  H01L21/823431 ,  H01L21/823437 ,  H01L27/0886 ,  H01L27/0924 ,  H01L29/66545

Abstract: An IC device includes a substrate including a device region having a fin-type active region and a deep trench region; a gate line that extends in a direction intersecting the fin-type active region; and an inter-device isolation layer that fills the deep trench region. The gate line includes a first gate portion that extends on the device region to cover the fin-type active region and has a flat upper surface at a first level and a second gate portion that extends on the deep trench region to cover the inter-device isolation layer while being integrally connected to the first gate portion and has an upper surface at a second level that is closer to the substrate than the first level.