公开(公告)号：US09941172B2

公开(公告)日：2018-04-10

申请号：US15236427

申请日：2016-08-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong-Doo Kim ,  Joong-Won Jeon ,  Young-Deok Kwon ,  Suk-Joo Lee

IPC: H01L21/8234 ,  H01L27/02 ,  H01L23/522 ,  H01L23/528 ,  H01L21/768

CPC classification number: H01L21/823475 ,  H01L21/76804 ,  H01L21/76816 ,  H01L23/522 ,  H01L23/528 ,  H01L27/0207

Abstract: A method for fabricating a semiconductor device is provided. The method for fabricating the semiconductor device includes forming an interlayer insulating layer that comprises a first region and a second region, forming an etch stop pattern for exposing the second region in the first region of the interlayer insulating layer and forming a mask pattern that comprises a first via-hole that exposes an upper surface of the etch stop pattern and a second via-hole that penetrates the interlayer insulating layer on the interlayer insulating layer and the etch stop pattern.