公开(公告)号：US20190259840A1

公开(公告)日：2019-08-22

申请号：US16392000

申请日：2019-04-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-woo Kim ,  Hyun-ho Noh ,  Yong-seung Kim ,  Dong-suk Shin ,  Kwan-heum Lee ,  Yu-yeong Jo

IPC: H01L29/161 ,  H01L29/167 ,  H01L29/08 ,  H01L29/78 ,  H01L29/04

Abstract: Provided is a semiconductor device including: a fin structure on a substrate including a negative channel field-effect transistor (nFET) region and a positive channel field-effect transistor (pFET) region; a gate structure on the fin structure; and a source/drain structure adjacent to the gate structure, wherein the source/drain structure formed in the nFET region is an epitaxial layer including an n-type impurity at a concentration of about 1.8×1021/cm3 or more, includes silicon (Si) and germanium (Ge) on an outer portion of the source/drain structure, and includes Si but not Ge in an inner portion of the source/drain structure, wherein an inclined surface contacting an uppermost surface of the source/drain structure forms an angle of less than about 54.7° with a top surface of the fin structure.

公开(公告)号：US20190006469A1

公开(公告)日：2019-01-03

申请号：US15871374

申请日：2018-01-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-woo Kim ,  Hyun-ho Noh ,  Yong-seung Kim ,  Dong-suk Shin ,  Kwan-heum Lee ,  Yu-yeong Jo

IPC: H01L29/161 ,  H01L29/08 ,  H01L29/167 ,  H01L29/04 ,  H01L29/78

Abstract: Provided is a semiconductor device including: a fin structure on a substrate including a negative channel field-effect transistor (nFET) region and a positive channel field-effect transistor (pFET) region; a gate structure on the fin structure; and a source/drain structure adjacent to the gate structure, wherein the source/drain structure formed in the nFET region is an epitaxial layer including an n-type impurity at a concentration of about 1.8×1021/cm3 or more, includes silicon (Si) and germanium (Ge) on an outer portion of the source/drain structure, and includes Si but not Ge in an inner portion of the source/drain structure, wherein an inclined surface contacting an uppermost surface of the source/drain structure forms an angle of less than about 54.7° with a top surface of the fin structure.

公开(公告)号：US10790361B2

公开(公告)日：2020-09-29

申请号：US16392000

申请日：2019-04-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-woo Kim ,  Hyun-ho Noh ,  Yong-seung Kim ,  Dong-suk Shin ,  Kwan-heum Lee ,  Yu-yeong Jo

IPC: H01L29/161 ,  H01L29/08 ,  H01L29/78 ,  H01L29/04 ,  H01L29/167

Abstract: Provided is a semiconductor device including: a fin structure on a substrate including a negative channel field-effect transistor (nFET) region and a positive channel field-effect transistor (pFET) region; a gate structure on the fin structure; and a source/drain structure adjacent to the gate structure, wherein the source/drain structure formed in the nFET region is an epitaxial layer including an n-type impurity at a concentration of about 1.8×1021/cm3 or more, includes silicon (Si) and germanium (Ge) on an outer portion of the source/drain structure, and includes Si but not Ge in an inner portion of the source/drain structure, wherein an inclined surface contacting an uppermost surface of the source/drain structure forms an angle of less than about 54.7° with a top surface of the fin structure.

公开(公告)号：US10304932B2

公开(公告)日：2019-05-28

申请号：US15871374

申请日：2018-01-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-woo Kim ,  Hyun-ho Noh ,  Yong-seung Kim ,  Dong-suk Shin ,  Kwan-heum Lee ,  Yu-yeong Jo

IPC: H01L29/80 ,  H01L21/00 ,  H01L29/161 ,  H01L29/08 ,  H01L29/78 ,  H01L29/04 ,  H01L29/167

Abstract: Provided is a semiconductor device including: a fin structure on a substrate including a negative channel field-effect transistor (nFET) region and a positive channel field-effect transistor (pFET) region; a gate structure on the fin structure; and a source/drain structure adjacent to the gate structure, wherein the source/drain structure formed in the nFET region is an epitaxial layer including an n-type impurity at a concentration of about 1.8×1021/cm3 or more, includes silicon (Si) and germanium (Ge) on an outer portion of the source/drain structure, and includes Si but not Ge in an inner portion of the source/drain structure, wherein an inclined surface contacting an uppermost surface of the source/drain structure forms an angle of less than about 54.7° with a top surface of the fin structure.