公开(公告)号：US20130160950A1

公开(公告)日：2013-06-27

申请号：US13724794

申请日：2012-12-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyungjoon KIM ,  Sangheon LEE ,  Sang Jean JEON ,  Ji Myoung LEE ,  Yunkwang JEON

IPC: H05H1/46

CPC classification number: H05H1/46 ,  H05H2001/4667

Abstract: A plasma processing apparatus capable of adjusting a processing rate (e.g., etching or deposition rate) of a sample locally by adjusting a plasma density may be provided. For example, the plasma processing apparatus may include a processing chamber, an antenna coil inside the processing chamber to generate magnetic field, and a magnetic field blocking member configured to block the magnetic field generated at the antenna coil such that an intensity of the magnetic field is controlled by adjusting a gap distance between the magnetic field blocking member and the antenna coil. According to the plasma processing apparatus, an asymmetric etching of the sample can be minimized.

Abstract translation: 可以提供能够通过调节等离子体密度来局部调整样品的处理速度（例如蚀刻或沉积速率）的等离子体处理装置。 例如，等离子体处理装置可以包括处理室，处理室内的天线线圈以产生磁场;以及磁阻挡部件，被配置为阻挡在天线线圈处产生的磁场，使得磁场强度 通过调整磁场阻挡构件和天线线圈之间的间隙距离来控制。 根据等离子体处理装置，可以使样品的非对称蚀刻最小化。