公开(公告)号：US20130160950A1

公开(公告)日：2013-06-27

申请号：US13724794

申请日：2012-12-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyungjoon KIM ,  Sangheon LEE ,  Sang Jean JEON ,  Ji Myoung LEE ,  Yunkwang JEON

IPC: H05H1/46

CPC classification number: H05H1/46 ,  H05H2001/4667

Abstract: A plasma processing apparatus capable of adjusting a processing rate (e.g., etching or deposition rate) of a sample locally by adjusting a plasma density may be provided. For example, the plasma processing apparatus may include a processing chamber, an antenna coil inside the processing chamber to generate magnetic field, and a magnetic field blocking member configured to block the magnetic field generated at the antenna coil such that an intensity of the magnetic field is controlled by adjusting a gap distance between the magnetic field blocking member and the antenna coil. According to the plasma processing apparatus, an asymmetric etching of the sample can be minimized.

Abstract translation: 可以提供能够通过调节等离子体密度来局部调整样品的处理速度（例如蚀刻或沉积速率）的等离子体处理装置。 例如，等离子体处理装置可以包括处理室，处理室内的天线线圈以产生磁场;以及磁阻挡部件，被配置为阻挡在天线线圈处产生的磁场，使得磁场强度 通过调整磁场阻挡构件和天线线圈之间的间隙距离来控制。 根据等离子体处理装置，可以使样品的非对称蚀刻最小化。

公开(公告)号：US20250149301A1

公开(公告)日：2025-05-08

申请号：US19009570

申请日：2025-01-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chan Hoon PARK ,  Jung Hwan UM ,  Jin Young PARK ,  Ho Yong PARK ,  Jin Young BANG ,  Jong Woo SUN ,  Sang Jean JEON ,  Je Woo HAN

IPC: H01J37/32 ,  H01L21/67

Abstract: A plasma processing apparatus may include a support configured to receive a substrate, a gas distribution plate (GDP) including a plurality of nozzles facing the support, a main splitter configured to supply a process gas, and an additional splitter configured to supply an acceleration gas or a deceleration gas. The plurality of nozzles may include a plurality of central nozzles, a plurality of outer nozzles, a plurality of middle nozzles configured to spray the process gas and the acceleration gas, a plurality of first nozzles, and a plurality of second nozzles.

公开(公告)号：US20130141720A1

公开(公告)日：2013-06-06

申请号：US13690177

申请日：2012-11-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ho Yong PARK ,  Valdimir VOLYNETS ,  Vladimir PROTOPOPOV ,  Sang Heon LEE ,  Sung Ho JANG ,  Sang Jean JEON

IPC: G01J3/443

CPC classification number: G01J3/443 ,  G01N21/68

Abstract: A plasma diagnostic apparatus includes a vacuum chamber unit having at least one electrode and having plasma generated inside. A bias power unit is disposed inside the vacuum chamber unit to apply a radio frequency voltage to an electrode that supports a wafer. A spectrum unit decomposes light emitted from inside the plasma according to wavelengths. A light detection unit detects the light decomposed according to wavelengths. A control unit controls a turn-on and turn-off process of the light detection unit according to a waveform of the radio frequency voltage.

Abstract translation: 等离子体诊断装置包括具有至少一个电极并且内部产生等离子体的真空室单元。 偏置功率单元设置在真空室单元内，以对支撑晶片的电极施加射频电压。 光谱单元根据波长分解从等离子体内部发射的光。 光检测单元检测根据波长分解的光。 控制单元根据射频电压的波形来控制光检测单元的接通和关断处理。