公开(公告)号：US20220157955A1

公开(公告)日：2022-05-19

申请号：US17469361

申请日：2021-09-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Juhun PARK ,  Deokhan BAE ,  Jin-Wook KIM ,  Yuri LEE ,  Inyeal LEE ,  Yoonyoung JUNG

IPC: H01L29/417 ,  H01L27/092 ,  H01L21/8238

Abstract: Disclosed is a semiconductor device including a substrate including first and second active regions, a device isolation layer on the substrate and defining first and second active patterns, first and second gate electrodes running across the first and second active regions and aligned with each other, first and second source/drain patterns on the first and second active patterns, a first active contact connecting the first and second source/drain patterns to each other, and a gate cutting pattern between the first and second gate electrodes. An upper portion of the first active contact includes first and second upper dielectric patterns. The first active contact has a minimum width at a portion between the first and second upper dielectric patterns. A minimum width of the gate cutting pattern is a second width. A ratio of the first width to the second width is in a range of 0.8 to 1.2.

公开(公告)号：US20220375934A1

公开(公告)日：2022-11-24

申请号：US17569795

申请日：2022-01-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Juhun PARK ,  Deokhan BAE ,  Myungyoon UM ,  Yuri LEE ,  Yoonyoung JUNG ,  Sooyeon HONG

IPC: H01L27/088 ,  H01L29/423 ,  H01L29/786 ,  H01L29/66 ,  H01L29/417 ,  H01L29/78 ,  H01L21/8234 ,  H01L29/06

Abstract: An integrated circuit device includes: a first fin-type active region and a second fin-type active region that extend on a substrate in a straight line in a first horizontal direction and are adjacent to each other in the first horizontal direction; a fin isolation region arranged between the first fin-type active region and the second fin-type active region on the substrate and including a fin isolation insulation structure extending in a second horizontal direction perpendicular to the first horizontal direction; and a plurality of gate lines extending on the first fin-type active region in the second horizontal direction, wherein a first gate line that is closest to the fin isolation region from among the plurality of gate lines is inclined to be closer to a center of the fin isolation region in the first horizontal direction from a lowermost surface to an uppermost surface of the first gate line.