公开(公告)号：US20170008042A1

公开(公告)日：2017-01-12

申请号：US15165664

申请日：2016-05-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyouncheol Kim ,  Youngil Kwon ,  Giduck Kweon ,  Jong-il Park ,  lnwoo Seo ,  Wooksung Son

IPC: B08B7/00 ,  B08B9/08 ,  B08B5/00 ,  H01L21/02

CPC classification number: B08B7/0071 ,  B08B9/00 ,  C23C16/4401

Abstract: Embodiments of the inventive concepts provide a method of cleaning a furnace-type semiconductor apparatus that is equipped in a clean room and includes a process chamber in which a process of forming a thin film is performed on a substrate. The method includes supplying air of the clean room into the process chamber after the process of forming the thin film, and thermally treating an inside of the process chamber using the air of the clean room supplied to the inside of the process chamber. An adhered material containing chlorine is formed on an inner surface of the process chamber by the process of forming the thin film, and the chlorine of the adhered material is removed by the thermal treatment of the inside of the process chamber.

Abstract translation: 本发明构思的实施例提供了一种清洁装置在洁净室中的炉型半导体装置的方法，包括在基板上进行形成薄膜的工艺的处理室。 该方法包括在形成薄膜的过程之后将洁净室的空气供应到处理室中，并且使用供应到处理室内部的洁净室的空气热处理处理室的内部。 通过形成薄膜的过程，在处理室的内表面上形成含有氯的粘附材料，并且通过处理室内部的热处理除去附着材料的氯。