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公开(公告)号:US20230307227A1
公开(公告)日:2023-09-28
申请号:US18189556
申请日:2023-03-24
Applicant: Samsung Electronics Co., Ltd. , DNF Co., Ltd.
Inventor: Sunhye HWANG , Sung Gi KIM , Jihyun LEE , Yujin CHO , Seung SON , Gyun Sang LEE , Younjoung CHO , Byungkeun HWANG
IPC: H01L21/02 , C23C16/455 , C23C16/44 , C23C16/40
CPC classification number: H01L21/02216 , C23C16/45553 , H01L21/02164 , C23C16/4408 , C23C16/401
Abstract: Provided are a silicon precursor having a heterocyclic group, a composition for depositing a silicon-containing layer including the same, and a method of depositing a silicon-containing layer using the same. The silicon precursor is represented by Formula 1.
In Formula 1, A1 is a heterocyclic group including one or more nitrogen, and R1 is hydrogen or an alkyl group of 1-6 carbon atoms. R2 and R3 may be each independently an alkyl group of 1-6 carbon atoms.