公开(公告)号：US20200168906A1

公开(公告)日：2020-05-28

申请号：US16589490

申请日：2019-10-01

申请人： Samsung Electronics Co., Ltd. ,  POSTECH ACADEMY-INDUSTRY FOUNDATION

发明人： Donghee Yeon ,  Byoungwoo Kang ,  Junghwa Lee ,  Byungjin Choi ,  Sukgi Hong ,  Jinsu Ha

IPC分类号： H01M4/505 ,  H01M4/525 ,  H01M10/0525

摘要： A composite positive active material represented by Formula 1, LiaNibCocMndMeO2  Formula 1 wherein, in Formula 1, M is zirconium (Zr), aluminum (Al), rhenium (Re), vanadium (V), chromium (Cr), iron (Fe), gallium (Ga), silicon (Si), boron (B), ruthenium (Ru), titanium (Ti), niobium (Nb), molybdenum (Mo), magnesium (Mg), or platinum (Pt), 1.1≤a≤1.3, b+c+d+e≤1, 0≤b≤0.3, 0≤c≤0.3, 0

公开(公告)号：US20220278320A1

公开(公告)日：2022-09-01

申请号：US17748307

申请日：2022-05-19

申请人： Samsung Electronics Co., Ltd. ,  POSTECH ACADEMY-INDUSTRY FOUNDATION

发明人： Donghee Yeon ,  Byoungwoo Kang ,  Junghwa Lee ,  Byungjin Choi ,  Sukgi Hong ,  Jinsu Ha

IPC分类号： H01M4/505 ,  H01M10/0525 ,  H01M4/525 ,  H01M4/04 ,  H01M4/1391 ,  H01M4/36

摘要： A composite positive active material represented by Formula 1, LiaNibCOcMndMeO2  Formula 1 wherein, in Formula 1, M is zirconium (Zr), aluminum (Al), rhenium (Re), vanadium (V), chromium (Cr), iron (Fe), gallium (Ga), silicon (Si), boron (B), ruthenium (Ru), titanium (Ti), niobium (Nb), molybdenum (Mo), magnesium (Mg), or platinum (Pt), 1.1≤a≤1.3, b+c+d+e≤1, 0≤b≤0.3, 0≤c≤0.3, 0

公开(公告)号：US11362330B2

公开(公告)日：2022-06-14

申请号：US16589490

申请日：2019-10-01

申请人： Samsung Electronics Co., Ltd. ,  POSTECH ACADEMY-INDUSTRY FOUNDATION

发明人： Donghee Yeon ,  Byoungwoo Kang ,  Junghwa Lee ,  Byungjin Choi ,  Sukgi Hong ,  Jinsu Ha

IPC分类号： H01M4/505 ,  H01M10/0525 ,  H01M4/525 ,  H01M4/04 ,  H01M4/1391 ,  H01M4/36 ,  H01M4/02

摘要： A composite positive active material represented by Formula 1, LiaNibCocMndMeO2  Formula 1 wherein, in Formula 1, M is zirconium (Zr), aluminum (Al), rhenium (Re), vanadium (V), chromium (Cr), iron (Fe), gallium (Ga), silicon (Si), boron (B), ruthenium (Ru), titanium (Ti), niobium (Nb), molybdenum (Mo), magnesium (Mg), or platinum (Pt), 1.1≤a≤1.3, b+c+d+e≤1, 0≤b≤0.3, 0≤c≤0.3, 0

公开(公告)号：US12015151B2

公开(公告)日：2024-06-18

申请号：US17748307

申请日：2022-05-19

申请人： Samsung Electronics Co., Ltd. ,  POSTECH ACADEMY-INDUSTRY FOUNDATION

发明人： Donghee Yeon ,  Byoungwoo Kang ,  Junghwa Lee ,  Byungjin Choi ,  Sukgi Hong ,  Jinsu Ha

IPC分类号： H01M4/505 ,  H01M4/02 ,  H01M4/04 ,  H01M4/1391 ,  H01M4/36 ,  H01M4/525 ,  H01M10/0525

CPC分类号： H01M4/505 ,  H01M4/0471 ,  H01M4/1391 ,  H01M4/362 ,  H01M4/525 ,  H01M10/0525 ,  H01M2004/028

摘要： A composite positive active material represented by Formula 1,

LiaNibCOcMndMeO2  Formula 1

wherein, in Formula 1, M is zirconium (Zr), aluminum (Al), rhenium (Re), vanadium (V), chromium (Cr), iron (Fe), gallium (Ga), silicon (Si), boron (B), ruthenium (Ru), titanium (Ti), niobium (Nb), molybdenum (Mo), magnesium (Mg), or platinum (Pt), 1.1≤a≤1.3, b+c+d+e≤1, 0≤b≤0.3, 0≤c≤0.3, 0

公开(公告)号：US10763278B2

公开(公告)日：2020-09-01

申请号：US16243837

申请日：2019-01-09

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Kyunghwa Yun ,  Pansuk Kwak ,  Chanho Kim ,  Junghwa Lee

IPC分类号： H01L27/11582 ,  H01L23/528 ,  H01L23/535 ,  H01L27/11573

摘要： A semiconductor memory device includes a substrate having a cell array region and a contact region, a stack structure including a plurality of gate electrodes on the cell array region and the contact region, a plurality of cell vertical channel structures extending through the stack structure on the cell array region, and a contact structure disposed beside of the stack structure on a top surface of the substrate and disposed along a line extending from the cell array region toward the contact region. The height of the contact structure on the cell array region is different from the height of the contact structure on the contact region.