公开(公告)号：US20020125543A1

公开(公告)日：2002-09-12

申请号：US10055260

申请日：2001-10-26

Applicant: Samsung Electronics Co. Ltd.

Inventor： Kwang-jin Moon ,  Hee-sook Park ,  Myoung-bum Lee

IPC: H01L029/00

CPC classification number: H01L21/76829 ,  H01L21/32051

Abstract: A semiconductor device having a contact using a crack-protecting layer and a method of forming the same are provided. The crack-protecting layer formed of a dielectric material is formed on an interlayer dielectric layer. The crack-protecting layer relieves or absorbs residual stress generated on a conductive layer used in forming a contact plug. Thus, a contact can be formed without damage to the interlayer dielectric layer due to residual stress.

Abstract translation: 提供具有使用裂纹保护层的接触的半导体器件及其形成方法。 由介电材料形成的裂纹保护层形成在层间电介质层上。 裂纹保护层减轻或吸收在用于形成接触插塞的导电层上产生的残余应力。 因此，可以形成接触，而不会由于残余应力而损坏层间电介质层。