公开(公告)号：US20030060042A1

公开(公告)日：2003-03-27

申请号：US10127651

申请日：2002-04-22

Applicant: Samsung Electronics Co. Ltd.

Inventor： Hee-sook Park ,  Gil-heyun Choi ,  Seung-hwan Lee ,  Yun-jung Lee

IPC: H01L021/8234 ,  H01L021/8244 ,  H01L021/44

CPC classification number: H01L21/76843 ,  H01L21/28562 ,  H01L27/0629 ,  H01L27/105 ,  H01L27/10814 ,  H01L27/10882 ,  H01L27/10894 ,  H01L28/75 ,  H01L28/90

Abstract: A method for fabricating a semiconductor device is provided. A ruthenium layer is formed on a semiconductor substrate in a processing chamber. A barrier layer is formed on the ruthenium layer supplying a halide-free precursor in the processing chamber. A metal layer such as an aluminum layer, an aluminum alloy layer, a tungsten layer, or a copper layer is formed on the barrier layer. The barrier layer is one of a TiN layer, a TaN layer, a WN layer, and an MoN layer. The TiN layer is one of formed by using an MOCVD process and an ALD process, and the halide-free precursor is a titanium compound selected from the group consisting of pentakis(diethylamino) titanium, tetrakis(diethylamino) titanium, tetrakis(dimethylamino) titanium, and pentakis(dimethylamino) titanium. The TaN layer is formed by using one of an MOCVD process and an ALD process, and the halide-free precursor is a tantalum compound selected from the group consisting of t-butyltrikis(diethylamino) tantalum, pentakis(diethylamino) tantalum, tetrakis(dimethylamino) tantalum, and pentakis(dimethylamino) tantalum.

Abstract translation: 提供一种制造半导体器件的方法。 在处理室中的半导体衬底上形成钌层。 在处理室中提供无卤素前体的钌层上形成阻挡层。 在阻挡层上形成铝层，铝合金层，钨层，铜层等金属层。 阻挡层是TiN层，TaN层，WN层和MoN层之一。 TiN层是通过使用MOCVD法和ALD法形成的，并且不含卤化物的前体是选自五（二乙基氨基）钛，四（二乙基氨基）钛，四（二甲基氨基）钛，四 ，和五（二甲基氨基）钛。 通过使用MOCVD法和ALD法之一形成TaN层，无卤素前体是选自叔丁基（二乙氨基）钽，五（二乙基氨基）钽，四（二甲基氨基） ）钽和五（二甲基氨基）钽。

公开(公告)号：US20020125543A1

公开(公告)日：2002-09-12

申请号：US10055260

申请日：2001-10-26

Applicant: Samsung Electronics Co. Ltd.

Inventor： Kwang-jin Moon ,  Hee-sook Park ,  Myoung-bum Lee

IPC: H01L029/00

CPC classification number: H01L21/76829 ,  H01L21/32051

Abstract: A semiconductor device having a contact using a crack-protecting layer and a method of forming the same are provided. The crack-protecting layer formed of a dielectric material is formed on an interlayer dielectric layer. The crack-protecting layer relieves or absorbs residual stress generated on a conductive layer used in forming a contact plug. Thus, a contact can be formed without damage to the interlayer dielectric layer due to residual stress.

Abstract translation: 提供具有使用裂纹保护层的接触的半导体器件及其形成方法。 由介电材料形成的裂纹保护层形成在层间电介质层上。 裂纹保护层减轻或吸收在用于形成接触插塞的导电层上产生的残余应力。 因此，可以形成接触，而不会由于残余应力而损坏层间电介质层。