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1.发明申请公开(公告)号：US20120003773A1
公开(公告)日：2012-01-05
申请号：US13171356
申请日：2011-06-28
CPC分类号： H01L31/0352 , H01L31/0324 , H01L31/06 , Y02E10/50
摘要： A quantum dot (QD) sensitized wide bandgap (WBG) semiconductor heterojunction photovoltaic (PV) device comprises an electron conductive layer; an active photovoltaic (PV) layer adjacent the electron conductive layer; a hole conductive layer adjacent the active PV layer; and an electrode layer adjacent the hole conductive layer. The active PV layer comprises a wide bandgap (WBG) semiconductor material with Eg>2.0 eV, in the form of a 2-dimensional matrix defining at least two open spaces, and a narrower bandgap semiconductor material with Eg
摘要翻译： 宽带隙（WBG）半导体异质结光伏（PV）器件的量子点（QD）包括电子传导层; 邻近电子传导层的活性光伏（PV）层; 邻近活性PV层的孔导电层; 以及邻近导电层的电极层。 活性PV层包括具有限定至少两个开放空间的2维矩阵形式的Eg> 2.0eV的宽带隙（WBG）半导体材料和具有Eg <2.0eV的较窄带隙半导体材料，其形式为 的量子点（QD）填充由WBG半导体材料的矩阵限定的每个开放空间并与其建立异质结。 活性PV层优选通过共溅射沉积工艺制造，并且QD构成约40至约90vol。 活性PV层的％。
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2.发明授权Quantum dot sensitized wide bandgap semiconductor photovoltaic devices & methods of fabricating same 有权量子点敏化宽带隙半导体光电器件及其制造方法公开(公告)号：US07968792B2
公开(公告)日：2011-06-28
申请号：US11713652
申请日：2007-03-05
IPC分类号： H01L31/0328 , H01L31/0352
CPC分类号： H01L31/0352 , H01L31/0324 , H01L31/06 , Y02E10/50
摘要： A quantum dot (QD) sensitized wide bandgap (WBG) semiconductor heterojunction photovoltaic (PV) device comprises an electron conductive layer; an active photovoltaic (PV) layer adjacent the electron conductive layer; a hole conductive layer adjacent the active PV layer; and an electrode layer adjacent the hole conductive layer. The active PV layer comprises a wide bandgap (WBG) semiconductor material with Eg≧2.0 eV, in the form of a 2-dimensional matrix defining at least two open spaces, and a narrower bandgap semiconductor material with Eg
摘要翻译： 宽带隙（WBG）半导体异质结光伏（PV）器件的量子点（QD）包括电子传导层; 邻近电子传导层的活性光伏（PV）层; 邻近活性PV层的孔导电层; 以及邻近导电层的电极层。 活性PV层包括具有Eg≥2.0eV的宽带隙（WBG）半导体材料，其形式为限定至少两个开放空间的2维矩阵，以及具有Eg <2.0eV的较窄带隙半导体材料，形式为 的量子点（QD）填充由WBG半导体材料的矩阵限定的每个开放空间并与其建立异质结。 活性PV层优选通过共溅射沉积工艺制造，并且QD构成约40至约90vol。 活性PV层的％。
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3.发明授权Quantum dot-sensitized wide bandgap semiconductor heterojunction photovoltaic devices 有权量子点敏化宽带隙半导体异质结光伏器件公开(公告)号：US08975513B2
公开(公告)日：2015-03-10
申请号：US13171356
申请日：2011-06-28
IPC分类号： H01L31/032 , H01L31/0352 , H01L31/06
CPC分类号： H01L31/0352 , H01L31/0324 , H01L31/06 , Y02E10/50
摘要： A quantum dot (QD) sensitized wide bandgap (WBG) semiconductor heterojunction photovoltaic (PV) device comprises an electron conductive layer; an active photovoltaic (PV) layer adjacent the electron conductive layer; a hole conductive layer adjacent the active PV layer; and an electrode layer adjacent the hole conductive layer. The active PV layer comprises a wide bandgap (WBG) semiconductor material with Eg≧2.0 eV, in the form of a 2-dimensional matrix defining at least two open spaces, and a narrower bandgap semiconductor material with Eg
摘要翻译： 宽带隙（WBG）半导体异质结光伏（PV）器件的量子点（QD）包括电子传导层; 邻近电子传导层的活性光伏（PV）层; 邻近活性PV层的孔导电层; 以及邻近导电层的电极层。 活性PV层包括具有Eg≥2.0eV的宽带隙（WBG）半导体材料，其形式为限定至少两个开放空间的2维矩阵，以及具有Eg <2.0eV的较窄带隙半导体材料，形式为 的量子点（QD）填充由WBG半导体材料的矩阵限定的每个开放空间并与其建立异质结。 活性PV层优选通过共溅射沉积工艺制造，并且QD构成约40至约90vol。 活性PV层的％。
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公开(公告)号：US08673466B2
公开(公告)日：2014-03-18
申请号：US11525958
申请日：2006-09-25
IPC分类号： G11B5/66
摘要： A bit patterned magnetic recording medium comprises a substrate having a surface, and a plurality of spaced apart magnetic elements on the surface, each element constituting a discrete magnetic domain or bit of the same structure and comprised of a stack of thin film layers including in order from the substrate surface: a seed layer; and a perpendicular magnetic recording layer in contact with a surface of the seed layer and comprising a Co 1-x-yPtxCry alloy material, where 0.05≦x≦0.35 and 0≦y≦0.15. The Co1-x-yPtxCry alloy material has a first order magnetic anisotropy constant K1 up to about 2×107 erg/cm3, a saturation magnetization Ms up to about 1200 emu/cm3, an anisotropy field HK=2K1/Ms up to about 35 kOe, a hexagonal (0001) crystal structure with c-axis perpendicular to a surface thereof, and an X-Ray diffraction (XRD) rocking curve with a full width at half maximum (FWHM) of ˜5° or less.
摘要翻译： 位图形磁记录介质包括具有表面的基板和表面上的多个间隔开的磁性元件，每个元件构成相同结构的离散磁畴或位，并且包括一层薄层， 从基底表面：种子层; 以及与种子层的表面接触并包括Co 1-x-yPt x Cry合金材料的垂直磁记录层，其中0.05≤x≤0.35和0≤y≤0.15。 Co1-x-yPtxCry合金材料具有高达约2×107erg / cm3的一阶磁各向异性常数K1，高达约1200emu / cm3的饱和磁化强度Ms，高达约35的各向异性磁场HK = 2K1 / Ms kOe，具有垂直于其表面的c轴的六边形（0001）晶体结构，以及具有约5°或更小的全半宽度（FWHM）的X射线衍射（XRD）摇摆曲线。
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5.发明授权System, method and apparatus for storage architecture for bit patterned media using both erase band and shingled magnetic recording 有权用于使用擦除带和带状磁记录的位图形介质的存储架构的系统，方法和装置公开(公告)号：US08432633B2
公开(公告)日：2013-04-30
申请号：US12912324
申请日：2010-10-26
申请人： Michael K. Grobis , Hans J. Richter
发明人： Michael K. Grobis , Hans J. Richter
IPC分类号： G11B5/09
CPC分类号： G11B5/746 , G11B5/012 , G11B20/1217 , G11B2020/1294 , G11B2220/2516 , G11B2220/252
摘要： Storage architecture for bit patterned media uses both erase band and shingled magnetic recording. A hard disk drive may comprise a disk having bit patterned media with a plurality of data tracks arrayed in architecture pages having at least one of erase band mode (EBM), shingled mode (SM) and unallocated space. An actuator has a head for writing data to the data tracks of the bit patterned media. A control system monitors, reallocates and reconfigures the architecture pages from EBM, SM or unallocated space to a different one of EBM, SM or unallocated space to enhance performance of the hard disk drive.
摘要翻译： 位图形介质的存储架构使用擦除带和带状磁记录。 硬盘驱动器可以包括具有位图案化介质的盘，其具有排列在具有擦除频带模式（EBM），带状混合模式（SM）和未分配空间中的至少一个的架构页面中的多个数据轨迹。 致动器具有用于将数据写入位图案化介质的数据轨道的头部。 控制系统将EBM，SM或未分配空间的架构页面监控，重新配置和重新配置到不同的EBM，SM或未分配空间，以提高硬盘驱动器的性能。
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6.发明申请MAGNETIC RECORDING SYSTEM USING PERPENDICULAR EXCHANGE SPRING MEDIA AND RING HEADS 有权磁性录音系统采用全频交替播放媒体和铃声公开(公告)号：US20120162822A1
公开(公告)日：2012-06-28
申请号：US12977025
申请日：2010-12-22
IPC分类号： G11B5/127
CPC分类号： G11B5/1278 , G11B5/3116 , G11B5/66
摘要： The present invention generally relates to a magnetic recording system that utilizes perpendicular exchange spring media and ring heads. The write field of ring heads does not experience a strong loss as compared to pole heads because the pole can be kept long in the direction perpendicular to the recording medium and thus does not result in unfavorable write field scaling.
摘要翻译： 本发明一般涉及利用垂直交换弹簧介质和环形磁头的磁记录系统。 与磁头相比，环形磁头的写入场不会发生强大的损耗，因为磁极可以在与记录介质垂直的方向上保持很长的时间，因此不会导致不利的写入场缩放。
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公开(公告)号：US20080085424A1
公开(公告)日：2008-04-10
申请号：US11544609
申请日：2006-10-10
申请人： Alexander Y. Dobin , Hans J. Richter , Erol Girt
发明人： Alexander Y. Dobin , Hans J. Richter , Erol Girt
IPC分类号： G11B5/64
CPC分类号： G11B5/855
摘要： A method of performing data/information recording and retrieval utilizing a multilevel patterned magnetic medium, comprises: (a) providing a magnetic recording system including a read/write head and a multilevel patterned magnetic recording medium including a plurality of spaced apart elements each comprising a stacked plurality n of magnetic recording cells with different magnetic properties and magnetically decoupled from overlying and/or underlying cells; (b) providing relative movement between the write head and magnetic recording medium; and; (c) writing to the medium by supplying the write head with a modulated write current comprising a plurality n of pulses of different magnitudes while the head moves past each element, thereby applying n different magnetic field strengths to each element, the write current including a first pulse of magnitude sufficient to write to a first cell of each element having a highest magnetic coercivity of said cells, and n−1 succeeding pulses of progressively smaller magnitude for sequentially writing to the remaining n−1 lower magnetic coercivity cells of each element but of insufficient magnitude to write to progressively higher magnetic coercivity cells; whereby the writing occurs in a single pass of the write head past each element.
摘要翻译： 一种使用多级图案化磁介质执行数据/信息记录和检索的方法包括：（a）提供磁记录系统，该磁记录系统包括读/写磁头和包含多个间隔开的元件的多层图案化磁记录介质， 堆叠多个具有不同磁性的磁记录单元，并与上覆和/或下面的单元磁解除耦合; （b）提供写入头和磁记录介质之间的相对运动; 和; （c）当头部移动通过每个元件时，通过向写入头提供包括多个n个不同幅度的脉冲的调制写入电流来写入介质，从而对每个元件施加n个不同的磁场强度，写入电流包括 具有足以写入具有所述单元的最高磁矫顽力的每个元件的第一单元的第一脉冲幅度以及逐渐变小的量级的n-1个后续脉冲，用于顺序地写入每个元件的剩余n-1个低磁性矫顽力单元，但是 数量不足以写入逐渐升高的磁矫顽力细胞; 由此写入在写入头的单次通过每个元件之后发生。
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公开(公告)号：US08771848B2
公开(公告)日：2014-07-08
申请号：US11544634
申请日：2006-10-10
申请人： Erol Girt , Hans J. Richter , Alexander Y. Dobin
发明人： Erol Girt , Hans J. Richter , Alexander Y. Dobin
摘要： A bit patterned magnetic recording medium, comprises a non-magnetic substrate having a surface; a plurality of spaced apart magnetic elements on the surface, each of the elements constituting a discrete magnetic domain or bit; and a layer of a ferromagnetic material for regulating magnetic exchange coupling between said magnetic elements. The layer has a saturation magnetization Ms ranging from about 1 to about 2,000 emu/cm3, preferably below about 400 emu/cm3, more preferably below about 200 emu/cm3, and may overlie, underlie, or at least partially fill spaces between adjacent magnetic elements.
摘要翻译： 一种图案化的磁记录介质，包括具有表面的非磁性基底; 表面上的多个间隔开的磁性元件，每个元件构成离散的磁畴或位; 以及用于调节所述磁性元件之间的磁交换耦合的铁磁材料层。 该层具有约1至约2,000emu / cm 3，优选低于约400emu / cm 3，更优选低于约200emu / cm 3的饱和磁化强度Ms，并且可以覆盖，基本上或至少部分地填充相邻磁性 元素。
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9.发明申请Quantum dot sensitized wide bandgap semiconductor photovoltaic devices & methods of fabricating same 有权量子点敏化宽带隙半导体光电器件及其制造方法公开(公告)号：US20080216891A1
公开(公告)日：2008-09-11
申请号：US11713652
申请日：2007-03-05
CPC分类号： H01L31/0352 , H01L31/0324 , H01L31/06 , Y02E10/50
摘要： A quantum dot (QD) sensitized wide bandgap (WBG) semiconductor heterojunction photovoltaic (PV) device comprises an electron conductive layer; an active photovoltaic (PV) layer adjacent the electron conductive layer; a hole conductive layer adjacent the active PV layer; and an electrode layer adjacent the hole conductive layer. The active PV layer comprises a wide bandgap (WBG) semiconductor material with Eg≧2.0 eV, in the form of a 2-dimensional matrix defining at least two open spaces, and a narrower bandgap semiconductor material with Eg
摘要翻译： 宽带隙（WBG）半导体异质结光伏（PV）器件的量子点（QD）包括电子传导层; 邻近电子传导层的活性光伏（PV）层; 邻近活性PV层的孔导电层; 以及邻近导电层的电极层。 活性PV层包括具有限定至少两个开放空间的2维矩阵形式的宽带隙（WBG）半导体材料，具有限定至少两个开放空间的形式，具有较窄带隙半导体材料 以量子点（QD）的形式填充由WBG半导体材料的矩阵限定的每个开放空间并且与其建立异质结的E <2.0eV。 活性PV层优选通过共溅射沉积工艺制造，并且QD构成约40至约90vol。 活性PV层的％。
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公开(公告)号：US20080075978A1
公开(公告)日：2008-03-27
申请号：US11525958
申请日：2006-09-25
摘要： A bit patterned magnetic recording medium comprises a substrate having a surface, and a plurality of spaced apart magnetic elements on the surface, each element constituting a discrete magnetic domain or bit of the same structure and comprised of a stack of thin film layers including in order from the substrate surface: a seed layer; and a perpendicular magnetic recording layer in contact with a surface of the seed layer and comprising a Co1-x-yPtxCry alloy material, where 0.05≦x≦0.35 and 0≦y≦0.15. The Co1-x-yPtxCry alloy material has a first order magnetic anisotropy constant K, up to about 2×107 erg/cm3, a saturation magnetization Ms up to about 1200 emu/cm3, an anisotropy field HK=2K1/Ms up to about 35 kOe, a hexagonal (0001) crystal structure with c-axis perpendicular to a surface thereof, and an X-Ray diffraction (XRD) rocking curve with a full width at half maximum (FWHM) of ˜5° or less.
摘要翻译： 有位图案化的磁记录介质包括具有表面的衬底和表面上的多个间隔开的磁性元件，每个元件构成相同结构的离散磁畴或位，并且由一层薄膜层组成，包括顺序 从基底表面：种子层; 以及与籽晶层的表面接触并且包括Co 1-xy Pt 3 x Cr Cr合金材料的垂直磁记录层， 其中0.05 <= x <= 0.35且0 <= y <= 0.15。 合金材料具有一级磁各向异性常数K，高达约2×10 7Ω/ / SUP> erg / cm 3，饱和磁化强度M s高达约1200emu / cm 3，各向异性场H < 具有C轴垂直于其表面的六边形（0001）晶体结构，并且至少约为35kOe， X射线衍射（XRD）摇摆曲线半峰全宽（FWHM）为〜5°以下。
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