公开(公告)号：US11081190B1

公开(公告)日：2021-08-03

申请号：US16881778

申请日：2020-05-22

Applicant: SanDisk Technologies LLC

Inventor： Abhinav Anand ,  Young Pil Kim ,  Dana Lee

IPC: G11C7/00 ,  G11C16/26 ,  G11C16/04 ,  G11C16/24 ,  H01L27/11582 ,  G11C11/56 ,  H01L27/11556

Abstract: A method for data recovery in a memory array of a non-volatile memory system, wherein the method comprises detecting an electrical short between a word line (WL) of a memory cell transistor and a local source line (LI) of a memory structure of the array, increasing an initial voltage bias at the local source line to a second voltage bias that exceeds a threshold voltage of the shorted memory cell transistor and a voltage level of a bit line of the memory structure, thereby causing a sensing current to flow in a direction from the local source line to the bit line, and sensing at a sense amplifier of the memory structure the sensing current.