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公开(公告)号:US11081190B1
公开(公告)日:2021-08-03
申请号:US16881778
申请日:2020-05-22
Applicant: SanDisk Technologies LLC
Inventor: Abhinav Anand , Young Pil Kim , Dana Lee
IPC: G11C7/00 , G11C16/26 , G11C16/04 , G11C16/24 , H01L27/11582 , G11C11/56 , H01L27/11556
Abstract: A method for data recovery in a memory array of a non-volatile memory system, wherein the method comprises detecting an electrical short between a word line (WL) of a memory cell transistor and a local source line (LI) of a memory structure of the array, increasing an initial voltage bias at the local source line to a second voltage bias that exceeds a threshold voltage of the shorted memory cell transistor and a voltage level of a bit line of the memory structure, thereby causing a sensing current to flow in a direction from the local source line to the bit line, and sensing at a sense amplifier of the memory structure the sensing current.