公开(公告)号：US09685484B1

公开(公告)日：2017-06-20

申请号：US15215263

申请日：2016-07-20

Applicant: SanDisk Technologies LLC

Inventor： Peter Rabkin ,  Perumal Ratnam ,  Masaaki Higashitani ,  Chris Petti

IPC: H01L27/24 ,  H01L45/00

CPC classification number: H01L27/2481 ,  H01L27/2454 ,  H01L45/04 ,  H01L45/1226 ,  H01L45/146

Abstract: Technology is described for reversible resistivity memory having a crystalline silicon bit line. In one aspect, a memory structure comprises a hollow pillar of crystalline silicon inside of reversible resistivity material. The crystalline silicon may serve as a bit line. The memory structure may further comprise conductive material that forms word lines coupled to the outer surface of the reversible resistivity material. A memory cell comprises a portion of the reversible resistivity material between the crystalline silicon and one of the word lines. In one aspect, the hollow pillar of crystalline silicon surrounds a gate oxide, which surrounds a conductive transistor gate. Thus, the hollow pillar of crystalline silicon may function as a channel of a transistor. In one aspect, the crystalline silicon has predominantly a (100) orientation with respect to an inner surface of the reversible resistivity material. In one aspect, the crystalline silicon is a single crystal.