公开(公告)号：US20190304549A1

公开(公告)日：2019-10-03

申请号：US15937420

申请日：2018-03-27

Applicant: SanDisk Technologies LLC

Inventor： Xiang YANG ,  Huai-yuan TSENG ,  Deepanshu DUTTA

IPC: G11C16/30 ,  G11C16/08 ,  G11C16/24 ,  G11C16/04 ,  H01L23/528 ,  H01L27/11524 ,  H01L27/1157

Abstract: An apparatus includes a plurality of solid-state storage elements, a plurality of control lines coupled to the plurality of solid-state storage elements, and control circuitry in communication with the plurality of control lines. The control circuitry is configured to during a first phase of a control line pre-charging stage, charge one or more unselected control lines of the plurality of control lines using a regulated charging current for a period of time based at least in part on a bias variance state associated with the plurality of control lines, and during a second phase of the control line pre-charging stage, charge the one or more unselected bit lines to an inhibit voltage level using an unregulated charging current.