公开(公告)号：US20240321371A1

公开(公告)日：2024-09-26

申请号：US18355357

申请日：2023-07-19

Applicant: SanDisk Technologies LLC

Inventor： Deniz Bozdag ,  Juan P. Saenz ,  Dimitri Houssameddine ,  Mark Lin

IPC: G11C17/16 ,  G11C17/18 ,  H10B20/25

CPC classification number: G11C17/165 ,  G11C17/18 ,  H10B20/25

Abstract: An apparatus is provided that includes a memory cell having a reversible resistance-switching memory element coupled in series with a selector element. The selector element has a first resistance. The resistance-switching memory element is configured to reversibly switch between a second resistance and a third resistance. The memory cell may be selectively configured as either a re-writeable memory cell or a one-time programmable memory cell. The memory cell functions as a one-time programmable memory cell regardless of whether the resistance-switching memory element has the second resistance, the third resistance, or is electrically shorted.