公开(公告)号：US09263624B2

公开(公告)日：2016-02-16

申请号：US13643422

申请日：2011-04-05

申请人： Sang Jin Moon ,  Won Wook So ,  Myung Hoee Koo ,  Dong Soon Park

发明人： Sang Jin Moon ,  Won Wook So ,  Myung Hoee Koo ,  Dong Soon Park

IPC分类号： H01L31/00 ,  H01L31/18 ,  C30B17/00 ,  C30B11/00 ,  C30B28/06 ,  C30B29/06

CPC分类号： H01L31/182 ,  C30B11/002 ,  C30B11/003 ,  C30B17/00 ,  C30B28/06 ,  C30B29/06 ,  Y02E10/546 ,  Y02P70/521

摘要： The present invention relates to a high-output apparatus for manufacturing a polycrystal silicon ingot for a solar cell, and more particularly, to an apparatus for manufacturing a polycrystal silicon ingot by means of heating and melting raw silicon in a vacuum chamber, and then cooling the molten silicon, wherein the apparatus comprises: a plurality of crucibles arranged so as to be horizontally separated from one another within the vacuum chamber, and in each of which raw silicon is filled for manufacturing polycrystal silicon ingots; heating means provided at the outside of each of the crucibles so as to heat each crucible and melt the raw silicon filled therein; and cooling means for cooling the crucibles, so as to enable the silicon melted by the heating means to be cooled in one direction and be formed into polycrystal ingots.

摘要翻译： 本发明涉及一种用于制造太阳能电池用多晶硅锭的高输出装置，更具体地，涉及一种通过在真空室中加热和熔化原料硅然后冷却而制造多晶硅锭的装置 所述熔融硅，其中所述装置包括：多个坩埚，其布置成在所述真空室内彼此水平分离，并且其中每个所述原料硅被填充以制造多晶硅锭; 设置在每个坩埚的外侧的加热装置，以加热每个坩埚并熔化填充在其中的原料硅; 以及用于冷却坩埚的冷却装置，以使由加热装置熔化的硅在一个方向上被冷却并形成多晶锭。

公开(公告)号：US20130036769A1

公开(公告)日：2013-02-14

申请号：US13643422

申请日：2011-04-05

申请人： Sang Jin Moon ,  Won Wook So ,  Myung Hoee Koo ,  Dong Soon Park

发明人： Sang Jin Moon ,  Won Wook So ,  Myung Hoee Koo ,  Dong Soon Park

IPC分类号： F27B14/14

CPC分类号： H01L31/182 ,  C30B11/002 ,  C30B11/003 ,  C30B17/00 ,  C30B28/06 ,  C30B29/06 ,  Y02E10/546 ,  Y02P70/521

摘要： The present invention relates to a high-output apparatus for manufacturing a polycrystal silicon ingot for a solar cell, and more particularly, to an apparatus for manufacturing a polycrystal silicon ingot by means of heating and melting raw silicon in a vacuum chamber, and then cooling the molten silicon, wherein the apparatus comprises: a plurality of crucibles arranged so as to be horizontally separated from one another within the vacuum chamber, and in each of which raw silicon is filled for manufacturing polycrystal silicon ingots; heating means provided at the outside of each of the crucibles so as to heat each crucible and melt the raw silicon filled therein.; and cooling means for cooling the crucibles, so as to enable the silicon melted by the heating means to be cooled in one direction and be formed into polycrystal ingots.

摘要翻译： 本发明涉及一种用于制造太阳能电池用多晶硅锭的高输出装置，更具体地，涉及一种通过在真空室中加热和熔化原料硅然后冷却而制造多晶硅锭的装置 所述熔融硅，其中所述装置包括：多个坩埚，其布置成在所述真空室内彼此水平分离，并且其中每个所述原料硅被填充以制造多晶硅锭; 在每个坩埚的外侧设置加热装置，以加热每个坩埚并熔化填充在其中的原料硅; 以及用于冷却坩埚的冷却装置，以使由加热装置熔化的硅在一个方向上被冷却并形成多晶锭。