公开(公告)号：US20240363773A1

公开(公告)日：2024-10-31

申请号：US18767278

申请日：2024-07-09

申请人： TRINA SOLAR CO., LTD.

发明人： Zigang Wang ,  Kuiyi Wu

IPC分类号： H01L31/0288 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/0368 ,  H01L31/18

CPC分类号： H01L31/0288 ,  H01L31/02168 ,  H01L31/022441 ,  H01L31/03682 ,  H01L31/182

摘要： A solar cell, a preparation method thereof, and a photovoltaic module. The solar cell includes a silicon substrate, a tunnel oxide layer, a first doped polysilicon layer, a laser-absorption layer, and a second doped polysilicon layer. The tunnel oxide layer is disposed on a surface of the silicon substrate. The first doped polysilicon layer is disposed on a surface of the tunnel oxide layer. A surface of the first doped polysilicon layer includes a metal contact region and a non-metal contact region. The laser-absorption layer is disposed on the metal contact region of the surface of the first doped polysilicon layer. The laser-absorption layer is adapted to be vaporized by absorbing a laser having a predetermined wavelength. The second doped polysilicon layer is disposed on a surface of the laser-absorption layer.

公开(公告)号：US20240274745A1

公开(公告)日：2024-08-15

申请号：US18289800

申请日：2022-10-25

申请人： TRINA SOLAR CO., LTD

发明人： Chengfa LIU ,  Yiqi CHEN ,  Yang ZOU ,  Zhiyuan LIU ,  Yao WANG ,  Daming CHEN ,  Xueling ZHANG ,  Yifeng CHEN ,  Zhiqiang FENG

IPC分类号： H01L31/18 ,  H01L31/0224 ,  H01L31/0745

CPC分类号： H01L31/182 ,  H01L31/022425 ,  H01L31/0745

摘要： The present application provides an emitter, a selective emitter cell preparation method and a selective emitter cell. The preparation method for the selective emitter cell comprises: sequentially irradiating a boron-rich layer using lasers of at least two different wavelengths, and sequentially doping boron atoms in the boron-rich layer to the same region of a silicon wafer by means of a laser, to obtain the emitter.

公开(公告)号：US20240266460A1

公开(公告)日：2024-08-08

申请号：US18488909

申请日：2023-10-17

申请人： ZHEJIANG JINKO SOLAR CO., LTD. ,  JINKO SOLAR CO., LTD.

发明人： Hao WANG ,  Wenqi LI ,  Ding YU ,  Jiahao WU ,  Xu LIU

IPC分类号： H01L31/18 ,  H01L31/02 ,  H01L31/0288

CPC分类号： H01L31/1868 ,  H01L31/02008 ,  H01L31/0288 ,  H01L31/182

摘要： The solar cell includes a silicon substrate, multiple first electrodes, and multiple second electrodes. The solar cell further includes a tunneling oxide layer, multiple doped polysilicon layers, and at least one barrier layer. The at least one barrier layer is arranged between every adjacent two doped polysilicon layers in the multiple doped polysilicon layers, and the multiple first electrodes are electrically connected to different doped polysilicon layers. The solar cell provided according to the present application can reduce the total thickness of the polycrystalline silicon layer, so that a thinner polycrystalline silicon layer can reduce parasitic absorption, thereby increasing short-circuit current. Moreover, the risk of slurry burning through the tunneling oxide layer is reduced by the barrier layer, while reducing metal recombination, which increases the open circuit voltage of the solar cell, thereby improving the photoelectric conversion efficiency of the solar cell.

公开(公告)号：US20240258441A1

公开(公告)日：2024-08-01

申请号：US18629905

申请日：2024-04-08

申请人： LAPLACE Renewable Energy Technology Co., Ltd.

发明人： Wei Fan ,  Jiaji Lin ,  Wu Zhang

IPC分类号： H01L31/0216 ,  H01L31/18

CPC分类号： H01L31/02168 ,  H01L31/182

摘要： A method for making a solar cell includes: providing and texturing a silicon substrate including a first surface and a second surface opposite to the first surface; performing boron diffusion and high-temperature oxidation treatment on the silicon substrate; forming a tunnel oxide layer and a doped polycrystalline silicon layer on a second surface; depositing a passivation layer on the first surface or both the first surface and the second surface; depositing anti-reflection layers on the first and second surfaces; forming metal grid lines on both the first and second surfaces to form a solar sheet; applying a deflection voltage to the solar sheet; maintaining the deflection voltage and using laser to scan the metal grid lines on the first surface.

公开(公告)号：US12009448B2

公开(公告)日：2024-06-11

申请号：US16594417

申请日：2019-10-07

申请人： Maxeon Solar Pte, Ltd.

发明人： Peter John Cousins

IPC分类号： H01L31/068 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/0236 ,  H01L31/0368 ,  H01L31/056 ,  H01L31/072 ,  H01L31/0745 ,  H01L31/18

CPC分类号： H01L31/0682 ,  H01L31/02168 ,  H01L31/022433 ,  H01L31/02363 ,  H01L31/03682 ,  H01L31/056 ,  H01L31/072 ,  H01L31/0745 ,  H01L31/1804 ,  H01L31/182 ,  Y02E10/52 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/50

摘要： A bipolar solar cell includes a backside junction formed by a silicon substrate and a first doped layer of a first dopant type on the backside of the solar cell. A second doped layer of a second dopant type makes an electrical connection to the substrate from the front side of the solar cell. A first metal contact of a first electrical polarity electrically connects to the first doped layer on the backside of the solar cell, and a second metal contact of a second electrical polarity electrically connects to the second doped layer on the front side of the solar cell. An external electrical circuit may be electrically connected to the first and second metal contacts to be powered by the solar cell.

公开(公告)号：US11929382B2

公开(公告)日：2024-03-12

申请号：US17369384

申请日：2021-07-07

申请人： SiOnyx, LLC

发明人： Homayoon Haddad ,  Jutao Jiang

IPC分类号： H01L27/146 ,  B23K26/352 ,  B82Y40/00 ,  H01L31/0232 ,  H01L31/028 ,  H01L31/18

CPC分类号： H01L27/14643 ,  B23K26/355 ,  B82Y40/00 ,  H01L27/14625 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/1464 ,  H01L27/14689 ,  H01L31/02327 ,  H01L31/028 ,  H01L31/182

摘要： Photosensitive devices and associated methods are provided. In one aspect, for example, a photosensitive imager device can include a semiconductor layer having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor layer and positioned to interact with electromagnetic radiation. The textured region can be formed from a series of shallow trench isolation features.

公开(公告)号：US20230369530A1

公开(公告)日：2023-11-16

申请号：US18030028

申请日：2021-10-07

申请人： INTERNATIONAL SOLAR ENERGY RESEARCH CENTER KONSTANZ E.V.

发明人： Florian BUCHHOLZ ,  Jan HOSS ,  Haifeng CHU ,  Jan LOSSEN ,  Valentin Dan MIHAILETCHI

IPC分类号： H01L31/18 ,  H01L31/0224

CPC分类号： H01L31/182 ,  H01L31/1868 ,  H01L31/022458

摘要： Provided are a method for local structuring of a silicon layer, which method comprises a step of local modification of the etching resistance within said silicon layer and a subsequent step of removing unmodified regions of said silicon layer by etching and applications of this method for the production of solar cells.

公开(公告)号：US20230307573A1

公开(公告)日：2023-09-28

申请号：US18099271

申请日：2023-01-20

申请人： JIANGSU RUNERGY CENTURY PHOTOVOLTAIC TECHNOLOGY CO., LTD.

发明人： Yang YANG ,  Rulong CHEN ,  Yanbin ZHU ,  Haibo LI ,  Zhuojian YANG ,  Longzhong TAO

IPC分类号： H01L31/18 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/0236 ,  H01L31/0368 ,  H01L31/068

CPC分类号： H01L31/182 ,  H01L31/02168 ,  H01L31/022441 ,  H01L31/02363 ,  H01L31/03682 ,  H01L31/0682 ,  H01L31/1868 ,  H01L31/1872

摘要： A preparation method of a low-cost passivated contact full-back electrode solar cell includes: performing alkali polishing on a Si wafer; performing RCA cleaning and HF cleaning; growing a tunnel SiOx film layer, an in-situ doped amorphous Si film layer, and a texturing mask layer on the back of the Si wafer; performing annealing activation on the amorphous Si film layer to form a polycrystalline Si film layer; etching the texturing mask layer; performing double-sided texturing on the Si wafer; performing HF cleaning to remove the texturing mask layer; depositing an AlOx film on the front and back of the Si wafer; depositing a SiNx passivation film on the front and back of the Si wafer; ablating a part of the AlOx film and a part of the SiNx passivation film on the back of the Si wafer; and performing screen-printing and sintering on the back of the Si wafer.

公开(公告)号：US20230223483A1

公开(公告)日：2023-07-13

申请号：US17923405

申请日：2021-03-22

申请人： EnPV GmbH

发明人： Erik Hoffmann ,  Jürgen Werner

IPC分类号： H01L31/0288 ,  H01L31/056 ,  H01L31/18

CPC分类号： H01L31/0288 ,  H01L31/056 ,  H01L31/182

摘要： The invention relates to a back-side contact solar cell including a semiconductor substrate, in particular a silicon wafer, including a front side and a back side, the solar cell having electrodes of a first polarity and electrodes of a second polarity on the back side, wherein a tunnel layer and a highly doped silicon layer are positioned under the electrodes of a first polarity, and the electrodes of the second polarity make direct electrical and mechanical contact with the semiconductor substrate.

公开(公告)号：US11646387B2

公开(公告)日：2023-05-09

申请号：US16377074

申请日：2019-04-05

申请人： SunPower Corporation

发明人： Pei Hsuan Lu ,  Benjamin I. Hsia ,  David Aaron Randolph Barkhouse ,  David C. Okawa ,  David F. Kavulak ,  Lewis C. Abra ,  George G. Correos ,  Richard Hamilton Sewell ,  Ryan Reagan ,  Tamir Lance ,  Thierry Nguyen

IPC分类号： H01L31/05 ,  H01L31/0224 ,  H02S40/34 ,  H01L31/18 ,  H01L31/068

CPC分类号： H01L31/0516 ,  H01L31/02245 ,  H01L31/0682 ,  H01L31/182 ,  H02S40/34

摘要： A method of fabricating solar cell, solar laminate and/or solar module string is provided. The method may include: locating a metal foil over a plurality of semiconductor substrates; exposing the metal foil to laser beam over selected portions of the plurality of semiconductor substrates, wherein exposing the metal foil to the laser beam forms a plurality conductive contact structures having of locally deposited metal portion electrically connecting the metal foil to the semiconductor substrates at the selected portions; and selectively removing portions of the metal foil, wherein remaining portions of the metal foil extend between at least two of the plurality of semiconductor substrates.