专利检索 ap:("Sang Yong YOON" OR "Ki Tae PARK" OR "Moo Sung KIM" OR "Bo Geun KIM" OR "Hyun jun YOON") AND inv:"Hyun jun YOON" 第 1 页

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发明申请
FLASH MEMORY DEVICE USING ADAPTIVE PROGRAM VERIFICATION SCHEME AND RELATED METHOD OF OPERATION 有权
标题翻译：使用自适应程序验证方案的闪存存储器件及其相关操作方法

公开(公告)号：US20110194346A1

公开(公告)日：2011-08-11

申请号：US12963867

申请日：2010-12-09

申请人： Sang Yong YOON , Ki Tae PARK , Moo Sung KIM , Bo Geun KIM , Hyun jun YOON

发明人： Sang Yong YOON , Ki Tae PARK , Moo Sung KIM , Bo Geun KIM , Hyun jun YOON

IPC分类号： G11C16/04 , G11C11/34

CPC分类号： G11C16/3459 , G11C11/56 , G11C11/5671 , G11C16/10 , G11C16/3454

摘要： A method of programming a flash memory device comprises programming selected memory cells, performing a verification operation to determine whether the selected memory cells have reached a target program state, and determining a start point of the verification operation based on a programming characteristic associated with a detection of a pass bit during programming of an initial program state.

摘要翻译： 一种对闪速存储器件进行编程的方法包括编程所选择的存储器单元，执行验证操作以确定所选择的存储器单元是否已经达到目标程序状态，以及基于与检测相关联的编程特性来确定验证操作的起始点在编程初始程序状态期间的通过位。