公开(公告)号：US20100178620A1

公开(公告)日：2010-07-15

申请号：US12624427

申请日：2009-11-24

申请人： Satoshi DEI ,  Kyoyu Yasuda ,  Koichi Hasegawa ,  Fumihiro Toyokawa ,  Masato Tanaka ,  Keiji Konno

发明人： Satoshi DEI ,  Kyoyu Yasuda ,  Koichi Hasegawa ,  Fumihiro Toyokawa ,  Masato Tanaka ,  Keiji Konno

IPC分类号： B05D1/32 ,  G03F7/20 ,  C09D183/04

CPC分类号： G03F7/0757 ,  C09D183/04 ,  G03F7/0035 ,  G03F7/0048 ,  G03F7/40

摘要： A method for forming an inverted pattern includes forming a photoresist pattern on a substrate, filling a space formed by the photoresist pattern with a resin composition including a polysiloxane and a solvent, and removing the photoresist pattern to form an inverted pattern. The resin composition includes (A) a polysiloxane obtained by hydrolysis and condensation of two types of hydrolysable silane compounds having a specific structure, and (B) an organic solvent containing an alcohol or ether having a specific structure.

摘要翻译： 形成反转图案的方法包括在基板上形成光致抗蚀剂图案，用由聚硅氧烷和溶剂的树脂组合物填充由光致抗蚀剂图案形成的空间，并除去光致抗蚀剂图案以形成倒置图案。 树脂组合物包含（A）通过水解和缩合具有特定结构的两种类型的可水解硅烷化合物获得的聚硅氧烷，和（B）含有特定结构的醇或醚的有机溶剂。

公开(公告)号：US20130004900A1

公开(公告)日：2013-01-03

申请号：US13609373

申请日：2012-09-11

申请人： Yousuke Konno ,  Nakaatsu Yoshimura ,  Fumihiro Toyokawa ,  Hikaru Sugita

发明人： Yousuke Konno ,  Nakaatsu Yoshimura ,  Fumihiro Toyokawa ,  Hikaru Sugita

IPC分类号： B05D7/24 ,  C09D5/00 ,  B05D3/10 ,  G03F7/20

CPC分类号： G03F7/091 ,  G03F7/168

摘要： A method for forming a resist under layer film includes providing a composition for forming a resist under layer film on a substrate which is to be processed. The composition includes a solvent and a calixarene compound or a derivative of the calixarene compound. The composition is set under an oxidizing atmosphere with an oxygen content of 1% or more by volume to form a resist under layer film.

摘要翻译： 形成抗蚀剂下层膜的方法包括提供在待加工的基材上形成抗蚀剂下层膜的组合物。 该组合物包括溶剂和杯芳烃化合物或杯芳烃化合物的衍生物。 将该组合物设定为氧含量为1体积％以上的氧化气氛，形成抗蚀剂层下膜。

公开(公告)号：US08691496B2

公开(公告)日：2014-04-08

申请号：US13609373

申请日：2012-09-11

申请人： Yousuke Konno ,  Nakaatsu Yoshimura ,  Fumihiro Toyokawa ,  Hikaru Sugita

发明人： Yousuke Konno ,  Nakaatsu Yoshimura ,  Fumihiro Toyokawa ,  Hikaru Sugita

IPC分类号： G03F7/004

CPC分类号： G03F7/091 ,  G03F7/168

摘要： A method for forming a resist under layer film includes providing a composition for forming a resist under layer film on a substrate which is to be processed. The composition includes a solvent and a calixarene compound or a derivative of the calixarene compound. The composition is set under an oxidizing atmosphere with an oxygen content of 1% or more by volume to form a resist under layer film.

摘要翻译： 形成抗蚀剂下层膜的方法包括提供在待加工的基材上形成抗蚀剂下层膜的组合物。 该组合物包括溶剂和杯芳烃化合物或杯芳烃化合物的衍生物。 将该组合物设定为氧含量为1体积％以上的氧化气氛，形成抗蚀剂层下膜。

公开(公告)号：US08288073B2

公开(公告)日：2012-10-16

申请号：US12442702

申请日：2007-09-18

申请人： Yousuke Konno ,  Nakaatsu Yoshimura ,  Fumihiro Toyokawa ,  Hikaru Sugita

发明人： Yousuke Konno ,  Nakaatsu Yoshimura ,  Fumihiro Toyokawa ,  Hikaru Sugita

IPC分类号： G03F7/00 ,  G03F7/26 ,  G03F7/40

CPC分类号： G03F7/091 ,  G03F7/168

摘要： This invention provides a method for resist under layer film formation, which can form a resist under layer film which can function as an anti-reflection film, is excellent in pattern transfer properties and etching resistance, and does not cause bending of a pattern even in the transfer of a fined pattern, and a composition for the resist under layer film for use in the method, and a method for pattern formation. The method for resist under layer film formation comprises the steps of coating a composition for resist under layer film formation (for example, a composition comprising a compound having a phenolic hydroxyl group, a solvent, and an accelerator) onto a substrate to be processed, and treating the formed coating film under an oxidizing atmosphere having an oxygen concentration of not less than 1% by volume and a temperature of 300° C. or higher to form a resist under layer film.

摘要翻译： 本发明提供一种抗蚀层下层成膜方法，其可形成可用作抗反射膜的抗蚀剂下层膜，图案转印性能和耐蚀刻性优异，并且不会引起图案的弯曲 精细图案的转印和用于该方法的抗蚀剂层下膜的组合物和图案形成方法。 抗蚀层下层成膜的方法包括以下步骤：将待层压成膜用组合物（例如，含有酚羟基的化合物，溶剂和促进剂的组合物）涂布在待加工基材上， 并在氧浓度不低于1体积％，温度为300℃以上的氧化气氛下处理所形成的涂膜，以形成抗蚀层下层膜。

公开(公告)号：US20100028802A1

公开(公告)日：2010-02-04

申请号：US12442702

申请日：2007-09-18

申请人： Yousuke Konno ,  Nakaatsu Yoshimura ,  Fumihiro Toyokawa ,  Hikaru Sugita

发明人： Yousuke Konno ,  Nakaatsu Yoshimura ,  Fumihiro Toyokawa ,  Hikaru Sugita

IPC分类号： G03F7/20 ,  G03F7/004

CPC分类号： G03F7/091 ,  G03F7/168

摘要： This invention provides a method for resist under layer film formation, which can form a resist under layer film which can function as an anti-reflection film, is excellent in pattern transfer properties and etching resistance, and does not cause bending of a pattern even in the transfer of a fined pattern, and a composition for the resist under layer film for use in the method, and a method for pattern formation. The method for resist under layer film formation comprises the steps of coating a composition for resist under layer film formation (for example, a composition comprising a compound having a phenolic hydroxyl group, a solvent, and an accelerator) onto a substrate to be processed, and treating the formed coating film under an oxidizing atmosphere having an oxygen concentration of not less than 1% by volume and a temperature of 300° C. or higher to form a resist under layer film.

摘要翻译： 本发明提供一种抗蚀层下层成膜方法，其可形成可用作抗反射膜的抗蚀剂下层膜，图案转印性能和耐蚀刻性优异，并且不会引起图案的弯曲 精细图案的转印和用于该方法的抗蚀剂层下膜的组合物和图案形成方法。 抗蚀层下层成膜的方法包括以下步骤：将待层压成膜用组合物（例如，含有酚羟基的化合物，溶剂和促进剂的组合物）涂布在待加工基材上， 并在氧浓度不低于1体积％，温度为300℃以上的氧化气氛下处理所形成的涂膜，以形成抗蚀层下层膜。