Composition for resist underlayer film and process for producing same
    1.
    发明授权
    Composition for resist underlayer film and process for producing same 有权
    抗蚀剂下层膜的组合物及其制造方法

    公开(公告)号:US08808446B2

    公开(公告)日:2014-08-19

    申请号:US11816642

    申请日:2006-02-24

    摘要: A composition for a resist underlayer film is provided. The composition has excellent storage stability and can form a resist underlayer film which has excellent adhesion to a resist film, can improve reproducibility of a resist pattern and is resistant to an alkaline liquid used in development and to oxygen ashing during the removal of a resist. The composition comprises a hydrolyzate and/or a condensate of a silane compound of the following formula (A), R1bR2cSi(OR3)4-a  (A) wherein R1 is a monovalent organic group having at least one unsaturated bond, R2 individually represents a hydrogen atom, a halogen atom or a monovalent organic group, R3 individually represents a monovalent organic group, R1 is a group other than OR3, a is an integer of 1 to 3, b is an integer of 1 to 3, and c is an integer of 0 to 2, provided that a=b+c.

    摘要翻译: 提供了抗蚀剂下层膜用组合物。 该组合物具有优异的储存稳定性,并且可以形成对抗蚀剂膜具有优异粘附性的抗蚀剂下层膜,可以提高抗蚀剂图案的再现性,并且耐除去抗蚀剂期间用于显影的碱性液体和氧气灰化。 该组合物包含下式(A)的硅烷化合物的水解产物和/或缩合物,其中R1是具有至少一个不饱和键的一价有机基团的R 1 b R 2 c Si(OR 3)4-a(A),R 2各自表示 氢原子,卤原子或一价有机基团,R 3分别表示一价有机基团,R 1为除OR 3以外的基团,a为1〜3的整数,b为1〜3的整数,c为 0〜2的整数,条件是a = b + c。

    Pattern-forming method
    2.
    发明授权
    Pattern-forming method 有权
    图案形成方法

    公开(公告)号:US08263315B2

    公开(公告)日:2012-09-11

    申请号:US12814476

    申请日:2010-06-13

    申请人: Keiji Konno

    发明人: Keiji Konno

    摘要: A pattern-forming method includes selectively exposing a resist layer formed using a positive-tone radiation-sensitive resin composition including a resin component and an acid generator. The resist layer is developed to form a first pattern. An uncrosslinked embedded section is formed adjacent the first the pattern using a pattern-forming resin composition including a polymer. The polymer has a carbon content higher than that of the resin component, does not include silicon atom in a molecule, and is crosslinkable due to an acid generated from the acid generator. The uncrosslinked embedded section is crosslinked in an area around an interface with the first pattern to form an array structure. The first pattern, a first crosslinked section, the uncrosslinked embedded section, and a second crosslinked section are repeatedly arranged in the array structure in this order. The first pattern and the uncrosslinked embedded section are removed to form a second pattern.

    摘要翻译: 图案形成方法包括选择性地曝光使用包含树脂组分和酸产生剂的正色散辐射敏感性树脂组合物形成的抗蚀剂层。 抗蚀剂层被显影以形成第一图案。 使用包含聚合物的图案形成树脂组合物在第一图案附近形成未交联的嵌入部分。 聚合物的碳含量高于树脂成分,不包括分子中的硅原子,并且由酸产生剂产生的酸可交联。 未交联的嵌入部分在与第一图案的界面周围的区域中交联以形成阵列结构。 第一图案,第一交联部分,未交联嵌入部分和第二交联部分依次重复排列在阵列结构中。 去除第一图案和未交联的嵌入部分以形成第二图案。

    Composition for forming antireflection film, laminate, and method for forming resist pattern
    3.
    发明申请
    Composition for forming antireflection film, laminate, and method for forming resist pattern 有权
    用于形成抗反射膜的组合物,层压体和形成抗蚀剂图案的方法

    公开(公告)号:US20060223008A1

    公开(公告)日:2006-10-05

    申请号:US11376146

    申请日:2006-03-16

    IPC分类号: G03F7/00 G03C5/00

    CPC分类号: G03F7/091 G03F7/0046

    摘要: An antireflection film-forming composition having excellent coatability, capable of significantly inhibiting production of fine microbubbles and capable of forming an antireflection film with a sufficiently decreased standing-wave effect, and having excellent solubility in water and alkaline developers is provided. The composition comprises a polymer having at least one polymerization unit with a hydroxyl group-containing organic group on the side chain, preferably a copolymer having at least one recurring unit of the following formula (2) and/or at least one recurring unit of the following formula (3) and at least one recurring unit of the following formula (4), and/or a salt thereof: wherein R1 and R2 represent a hydrogen atom, a fluorine atom, or a monovalent organic group, m is an integer of 1-20, and A represents a divalent coupling means.

    摘要翻译: 提供了具有优异的涂布性的防反射膜形成组合物,其能够显着抑制微细微泡的产生并且能够形成具有足够降低的驻波效应的抗反射膜,并且在水和碱性显影剂中具有优异的溶解性。 该组合物包含在侧链上具有至少一个具有含羟基有机基团的聚合单元的聚合物,优选具有至少一个下式(2)的重复单元的共聚物和/或至少一种重复单元 下式(3)和至少一个下式(4)的重复单元和/或其盐:其中R 1和R 2代表氢原子 氟原子或一价有机基团,m为1-20的整数,A表示二价键合机构。

    Film-forming composition
    4.
    发明授权
    Film-forming composition 有权
    成膜组合物

    公开(公告)号:US06406794B1

    公开(公告)日:2002-06-18

    申请号:US09778822

    申请日:2001-02-08

    IPC分类号: B32B904

    摘要: A film-forming composition comprising: (A) at least one silane compound selected from the group consisting of a compound shown by the following formula (1), a compound shown by the following formula (2), and a compound shown by the following formula (3) and a hydrolysis condensate of these compounds: R2R3Si(OR1)2  (1) R2Si(OR1)3  (2) Si(OR1)4  (3) wherein R1, R2, and R3 individually represent a monovalent organic group, (B) a polyether shown by the formula (PEO)p—(PPO)q—(PEO)r, wherein PEO represents a polyethylene oxide unit, PPO represents a polypropylene oxide unit, p is a number of 2-200, q is a number of 20-80, and r is a number of 2-200, and (C) an organic solvent. The composition exhibits superior storage stability, is capable of producing a low-density film having a small relative dielectric constant, low water absorption properties, and small vacant space size, and is thus suitable as an interlayer dielectric material in the manufacture of semiconductor devices.

    摘要翻译: 一种成膜组合物,其包含:(A)至少一种选自由下式(1)表示的化合物,下式(2)所示的化合物和下述化合物的硅烷化合物 式(3)和这些化合物的水解缩合物:其中R1,R2和R3各自表示一价有机基团,(B)由式(PEO)p-(PPO)q-(PEO)r表示的聚醚, 其中PEO表示聚环氧乙烷单元,PPO表示聚环氧丙烷单元,p为2〜200的数,q为20〜80的数,r为2〜200的数,(C)有机溶剂 。 该组合物表现出优异的储存稳定性,能够生产具有小的相对介电常数,低吸水性和小的空间空间尺寸的低密度膜,因此适合作为制造半导体器件的层间绝缘材料。

    Composition For Forming Antireflection Film, Layered Product, And Method Of Forming Resist Pattern
    5.
    发明申请
    Composition For Forming Antireflection Film, Layered Product, And Method Of Forming Resist Pattern 有权
    用于形成抗反射膜,分层产品和形成抗蚀剂图案的方法的组合物

    公开(公告)号:US20080124524A1

    公开(公告)日:2008-05-29

    申请号:US11792077

    申请日:2005-11-28

    IPC分类号: C08F20/56 B32B5/00 G03F7/039

    摘要: An antireflection film-forming composition which has excellent applicability, is significantly inhibited from generating ultrafine microbubbles, gives an antireflection film capable of sufficiently reducing the standing-wave effect, and has excellent solubility in water and an alkaline developing solution. The antireflection film-forming composition contains: (A) a copolymer (salt) of a sulfonic acid group-containing acrylamide derivative represented by, e.g., 2-(meth)acrylamido-2-methylpropanesulfonic acid and a fluoroalkyl group-containing acrylic acid ester derivative represented by, e.g., 2,2,3,3,3-pentafluoropropyl (meth)acrylate; and (B) a surfactant whose 0.1 wt. % aqueous solution has a surface tension as measured at 25° C. of 45 mN/m or lower.

    摘要翻译: 显着地抑制了具有优异适用性的抗反射膜形成组合物,从而产生超细微泡,得到能够充分降低驻波效应的抗反射膜,并且在水和碱性显影液中具有优异的溶解性。 防反射膜形成组合物包含:(A)由例如2-(甲基)丙烯酰胺基-2-甲基丙磺酸和含氟烷基的丙烯酸酯表示的含磺酸基的丙烯酰胺衍生物的共聚物(盐) 衍生物,例如(甲基)丙烯酸2,2,3,3,3-五氟丙酯; 和(B)表面活性剂,其0.1重量% %水溶液在25℃下测得的表面张力为45mN / m以下。

    Acenaphthylene derivative, polymer, and antireflection film-forming composition
    6.
    发明授权
    Acenaphthylene derivative, polymer, and antireflection film-forming composition 有权
    苊烯衍生物,聚合物和抗反射膜形成组合物

    公开(公告)号:US07037994B2

    公开(公告)日:2006-05-02

    申请号:US10624678

    申请日:2003-07-23

    摘要: Novel compounds acetoxymethylacenaphthylene and hydroxymethylacenaphthyleneare disclosed. A polymer prepared from these novel compounds containing a structural unit of the formula (3), wherein R1 is a hydrogen atom and R2and R3 individually represent a monovalent atom or a monovalent organic group is also disclosed. The polymer is suitable as a component for an antireflection film-forming composition exhibiting a high antireflection effect and not causing intermixing with a resist film.

    摘要翻译: 公开了新型化合物乙酰氧基甲基苊烯和羟甲基苊。 由含有式(3)结构单元的这些新化合物制备的聚合物,其中R 1是氢原子,R 2和R 3, SUP>分别表示一价原子或一价有机基团。 聚合物适合作为抗反射膜形成组合物的组分,其具有高抗反射效果并且不会与抗蚀剂膜混合。

    COMPOSITION FOR RESIST UNDERLAYER FILM AND PROCESS FOR PRODUCING SAME
    9.
    发明申请
    COMPOSITION FOR RESIST UNDERLAYER FILM AND PROCESS FOR PRODUCING SAME 有权
    抗静电膜的组合物及其生产方法

    公开(公告)号:US20100151384A1

    公开(公告)日:2010-06-17

    申请号:US12715406

    申请日:2010-03-02

    IPC分类号: G03F7/075 C07F7/08

    摘要: A composition for a resist underlayer film is provided. The composition has excellent storage stability and can form a resist underlayer film which has excellent adhesion to a resist film, can improve reproducibility of a resist pattern and is resistant to an alkaline liquid used in development and to oxygen asking during the removal of a resist. The composition comprises a hydrolyzate and/or a condensate of a silane compound of the following formula (A), R1bR2cSi (OR3)4-a  (A) wherein R1 is a monovalent organic group having at least one unsaturated bond, R2 individually represents a hydrogen atom, a halogen atom or a monovalent organic group, R3 individually represents a monovalent organic group, R1 is a group other than OR3, a is an integer of 1 to 3, b is an integer of 1 to 3, and c is an integer of 0 to 2, provided that a=b+c.

    摘要翻译: 提供了抗蚀剂下层膜用组合物。 该组合物具有优异的储存稳定性,并且可以形成对抗蚀剂膜具有优异粘合性的抗蚀剂下层膜,可以提高抗蚀剂图案的再现性,并且耐显影用碱性液体和除去抗蚀剂期间的氧气需求。 该组合物包含下式(A)的硅烷化合物的水解产物和/或缩合物,其中R1是具有至少一个不饱和键的一价有机基团的R 1 b R 2 c Si(OR 3)4-a(A),R 2各自表示 氢原子,卤原子或一价有机基团,R 3分别表示一价有机基团,R 1为除OR 3以外的基团,a为1〜3的整数,b为1〜3的整数,c为 0〜2的整数,条件是a = b + c。

    COMPOSITION FOR RESIST UNDERLAYER FILM AND PROCESS FOR PRODUCING SAME
    10.
    发明申请
    COMPOSITION FOR RESIST UNDERLAYER FILM AND PROCESS FOR PRODUCING SAME 有权
    抗静电膜的组合物及其生产方法

    公开(公告)号:US20090050020A1

    公开(公告)日:2009-02-26

    申请号:US11816642

    申请日:2006-02-24

    IPC分类号: C09D4/00

    摘要: A composition for a resist underlayer film is provided. The composition has excellent storage stability and can form a resist underlayer film which has excellent adhesion to a resist film, can improve reproducibility of a resist pattern and is resistant to an alkaline liquid used in development and to oxygen ashing during the removal of a resist. The composition comprises a hydrolyzate and/or a condensate of a silane compound of the following formula (A), R1bR2cSi(OR3)4-a  (A) wherein R1 is a monovalent organic group having at least one unsaturated bond, R2 individually represents a hydrogen atom, a halogen atom or a monovalent organic group, R3 individually represents a monovalent organic group, R1 is a group other than OR3, a is an integer of 1 to 3, b is an integer of 1 to 3, and c is an integer of 0 to 2, provided that a=b+c.

    摘要翻译: 提供了抗蚀剂下层膜用组合物。 该组合物具有优异的储存稳定性,并且可以形成对抗蚀剂膜具有优异粘附性的抗蚀剂下层膜,可以提高抗蚀剂图案的再现性,并且耐除去抗蚀剂期间用于显影的碱性液体和氧气灰化。 组合物包含下式(A)的硅烷化合物的水解产物和/或缩合物,<?在线式描述=“在线式”末端=“铅”→> R1bR2cSi(OR3)4- a(A)<?in-line-formula description =“In-line Formulas”end =“tail”?>其中R1是具有至少一个不饱和键的一价有机基团,R2各自表示氢原子,卤素原子 或一价有机基团,R 3分别表示一价有机基团,R 1为除OR 3以外的基团,a为1〜3的整数,b为1〜3的整数,c为0〜2的整数, 条件是a = b + c。