公开(公告)号：US07374817B2

公开(公告)日：2008-05-20

申请号：US10535450

申请日：2003-05-20

申请人： Satoshi Tanda ,  Taku Tsuneta ,  Yoshitoshi Okajima ,  Katsuhiko Inagaki ,  Kazuhiko Yamaya ,  Noriyuki Hatakenaka

发明人： Satoshi Tanda ,  Taku Tsuneta ,  Yoshitoshi Okajima ,  Katsuhiko Inagaki ,  Kazuhiko Yamaya ,  Noriyuki Hatakenaka

IPC分类号： B32B15/01

CPC分类号： C30B11/12 ,  C30B23/007 ,  C30B29/46

摘要： Disclosed is a transition-metal chalcogenide crystal having a topological configuration/structure. A micro-droplet of a chalcogen element, such as S, Se or Te, is condensed and circulated in suspended form in an atmosphere containing a Group IVb, Vb or VI transition metal element, such as Nb, Ta, Zr, Ti, Hf or W, together with the chalcogen element. Then, micro-whiskers of a transition metal chalcogenide formed in the atmosphere are attached onto a surface of the chalcogen-element micro-droplet by the action of a surface tension of the micro-droplet, and grown as a loop-shaped crystal wound around the surface of the micro-droplet to obtain a loop-shaped crystal having a twist of 0, π or 2π. The crystal has a ribbon-like open or closed loop configuration. The transition-metal chalcogenide crystal with the topological loop-shaped microstructure can exhibit original properties peculiar to each transition-metal chalcogenide, and has applicability, for example, to a quantum device, such as SQUID.

摘要翻译： 公开了具有拓扑结构/结构的过渡金属硫族化物晶体。 硫族元素如S，Se或Te的微滴在悬浮状态下冷凝并循环在含有IVb，Vb或VI族过渡金属元素如Nb，Ta，Zr，Ti，Hf的气氛中 或W，与硫属元素一起。 然后，通过微滴的表面张力的作用将在大气中形成的过渡金属硫属元素化物的微晶须附着在硫族元素微滴的表面上，并以缠绕在周围的环形晶体生长 微滴的表面，以获得扭曲为0，pi或2pi的环形晶体。 该晶体具有带状的开环或闭环配置。 具有拓扑环状微结构的过渡金属硫族化物晶体可以显示出每种过渡金属硫族化物特有的原始特性，并且具有例如量子器件（例如SQUID）的适用性。

公开(公告)号：US20060124048A1

公开(公告)日：2006-06-15

申请号：US10535450

申请日：2003-05-20

申请人： Satoshi Tanda ,  Taku Tsuneta ,  Yoshitoshi Okajima ,  Katsuhiko Inagaki ,  Kazuhiko Yamaya ,  Noriyuki Hatakenaka

发明人： Satoshi Tanda ,  Taku Tsuneta ,  Yoshitoshi Okajima ,  Katsuhiko Inagaki ,  Kazuhiko Yamaya ,  Noriyuki Hatakenaka

IPC分类号： H01L21/322 ,  C30B15/14

CPC分类号： C30B11/12 ,  C30B23/007 ,  C30B29/46

摘要： Disclosed is a transition-metal chalcogenide crystal having a topological configuration/structure. A micro-droplet of a chalcogen element, such as S, Se or Te, is condensed and circulated in suspended form in an atmosphere containing a Group IVb, Vb or VI transition metal element, such as Nb, Ta, Zr, Ti, Hf or W, together with the chalcogen element. Then, micro-whiskers of a transition metal chalcogenide formed in the atmosphere are attached onto a surface of the chalcogen-element micro-droplet by the action of a surface tension of the micro-droplet, and grown as a loop-shaped crystal wound around the surface of the micro-droplet to obtain a loop-shaped crystal having a twist of 0, π or 2 π. The crystal has a ribbon-like open or closed loop configuration. The transition-metal chalcogenide crystal with the topological loop-shaped microstructure can exhibit original properties peculiar to each transition-metal chalcogenide, and has applicability, for example, to a quantum device, such as SQUID.

摘要翻译： 公开了具有拓扑结构/结构的过渡金属硫族化物晶体。 硫族元素如S，Se或Te的微滴在悬浮状态下冷凝并循环在含有IVb，Vb或VI族过渡金属元素如Nb，Ta，Zr，Ti，Hf的气氛中 或W，与硫属元素一起。 然后，通过微滴的表面张力的作用将在大气中形成的过渡金属硫属元素化物的微晶须附着在硫族元素微滴的表面上，并以缠绕在周围的环形晶体生长 微滴的表面以获得具有0，pi或2π的扭曲的环形晶体。 该晶体具有带状的开环或闭环配置。 具有拓扑环状微结构的过渡金属硫族化物晶体可以显示出每种过渡金属硫族化物特有的原始特性，并且具有例如量子器件（例如SQUID）的适用性。

公开(公告)号：US20070183964A1

公开(公告)日：2007-08-09

申请号：US10558682

申请日：2004-03-30

申请人： Satoshi Tanda ,  Katsuhiko Inagaki ,  Taku Tsuneta ,  Takeshi Toshima

发明人： Satoshi Tanda ,  Katsuhiko Inagaki ,  Taku Tsuneta ,  Takeshi Toshima

IPC分类号： C01B19/04

CPC分类号： B82Y30/00 ,  C01B19/007 ,  C01P2004/16 ,  C01P2006/40 ,  C30B25/005 ,  C30B29/46

摘要： The present invention provides a nanostructure made of V group transition metal dichalcogenide such as NbSe2 and a method for preparing such a nanostructure. A nanofiber and nanotube comprising crystals of V group transition metal dichalcogenide such as NbSe2 or TaS2 have electric properties identical to those of a bulk single crystal. The preparation method is as follows: high-purity Nb and Se which are starting materials and which are mixed in a stoichiometric ratio are allowed to react with each other at 800° C. or less in a vacuum with a temperature gradient of 1 k/cm. In a method for preparing nanofibers or nanotubes from NbSe2 that is a starting material by a chemical transport process using a iodine acting as a medium, if C60 acting as a promoter is used, nuclei for forming the nanofibers or the nanotubes can be efficiently produced. Initial nanoparticles surrounding a C60 molecule form nanorings, which grow into the nanotubes. Other nanoparticles surrounding no C60 molecule grow into the nanofibers. The nanofibers prepared as described above have a diameter of 150 nm and a length of 10 μm.

摘要翻译： 本发明提供由V族过渡金属二硫属元素如NbSe 2 N制成的纳米结构体及其制备方法。 包含V族过渡金属二硫属元素的晶体的纳米纤维和纳米管如NbSe 2或TaS 2 2具有与本体单晶相同的电性能。 制备方法如下：作为起始原料并以化学计量比混合的高纯度Nb和Se在真空中在800℃或更低的温度下彼此反应，温度梯度为1k / 厘米。 在通过使用作为介质的碘的化学传输方法从作为原料的NbSe 2 N制备纳米纤维或纳米管的方法中，如果C 60作为助催化剂 ，可以有效地制造用于形成纳米纤维或纳米管的核。 围绕C 60分子的初始纳米颗粒形成纳米管，其生长成纳米管。 不含C 60分子的其他纳米颗粒生长到纳米纤维中。 如上所述制备的纳米纤维的直径为150nm，长度为10μm。