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公开(公告)号：US11932965B2
公开(公告)日：2024-03-19
申请号：US17256915
申请日：2019-03-05
发明人： Jiyong Yao , Yangwu Guo , Zhuang Li , Wenhao Xing , Xiaoyu Luo
CPC分类号： C30B29/46 , C01B19/002 , C30B11/02 , G02F1/3551
摘要： Disclosed in the present invention is a nonlinear optical crystal. The chemical formula of the nonlinear optical crystal is MHgGeSe4, M being selected from Ba or Sr. The nonlinear optical crystal has no symmetrical center, belongs to an orthorhombic crystal system, and has a space group Ama2. The nonlinear optical crystal is an infrared nonlinear optical crystal, and has the advantages of great nonlinear optical effect, wide light transmitting band, high hardness, good mechanical properties, breakage resistance, deliquescence resistance, easiness in processing and preserving, etc. Also disclosed in the present invention are a method for preparing the nonlinear optical crystal and application thereof.
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2.发明公开公开(公告)号：US20240035199A1
公开(公告)日：2024-02-01
申请号：US17974994
申请日：2022-10-27
发明人： Ki Kang KIM , Seokjoon YUN , Soo Ho CHOI
CPC分类号： C30B29/68 , C30B29/46 , C30B25/186
摘要： Disclosed are stack structures and their fabrication methods. The method comprises providing a growth chamber with a first two-dimensional material layer, forming a defect on a surface the first two-dimensional material layer, and forming a second two-dimensional material layer on the first two-dimensional material layer. The step of forming the second two-dimensional material layer includes supplying the growth chamber with a transition metal precursor and a chalcogen precursor, and reacting the first two-dimensional material layer and the transition metal precursor with each other.
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公开(公告)号：US11646202B2
公开(公告)日：2023-05-09
申请号：US16326508
申请日：2016-08-30
申请人： TOYOTA MOTOR EUROPE
CPC分类号： H01L21/02568 , C01B19/04 , C30B7/14 , C30B29/46 , H01L21/0242 , H01L21/02425 , H01L21/02601 , H01L21/02628 , C01P2002/84 , C01P2004/03 , C01P2004/04 , C01P2004/24 , C01P2006/40
摘要： A process for preparing stacks of metal chalcogenide flakes includes: (a) reacting together a source of the metal atom of the target metal chalcogenide with a source of the chalcogenide atom of the target metal chalcogenide, in the presence of a spacer, so as to produce flakes of the metal chalcogenide; (b) depositing metal chalcogenide flakes obtained using step (a) onto a substrate to form a stack of assembled metal chalcogenide flakes, wherein the spacer contains an alkyl chain linked to a functional group able to bond to the metal chalcogenide surface, said alkyl chain having a length of less than 18 carbon atoms, preferably between 6 and 14 carbon atoms.
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公开(公告)号：US20190211474A1
公开(公告)日：2019-07-11
申请号：US16326856
申请日：2017-08-23
发明人： Anthony Vargas , Fangze Liu , Christopher Adrian Lane , Daniel Rubin , Swastik Kar , Arun Bansil , Gianina Buda , Zachariah Hennighausen
CPC分类号： C30B29/46 , C30B25/02 , C30B29/68 , C30B30/00 , C30B33/02 , C30B33/04 , G11B7/1369 , H01L21/02485 , H01L21/02499 , H01L21/02505 , H01L21/02568 , H01L21/0262
摘要： Heterocrystals of metal dichalcogenides and Bi2S3, Bi2Se3 or Bi2Te3 are presented, in which the metal dichalcogenides and Bi2S3, Bi2Se3 or Bi2Te3 do not largely retain their independent properties. These heterocrystals exhibit electronic and optical changes, which make them attractive for beyond-silicon electronics and optoelectronics. Particularly, these heterocrystals can be re-configured in a manner that allows bit writing and pattern drawing. Embodiments of these heterocrystals, methods of forming these heterocrystals, methods of reconfiguring the heterocrystals, information storage devices, optoelectronic circuits and photonic crystals are presented.
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公开(公告)号：US20180259827A1
公开(公告)日：2018-09-13
申请号：US15976221
申请日：2018-05-10
CPC分类号： G02F1/3551 , C30B1/02 , C30B29/16 , C30B29/46 , G02F1/39 , G02F2001/392 , H01S3/10007 , H01S3/163
摘要： An infrared non-linear optical crystal has the following molecular formula: A18X21Y6M48, in which A is Ba, Sr or Pb; X is Zn, Cd or Mn; Y is Ga, In or Al; and M is S, Se or Te. The crystal belongs to trigonal system and has space group R3. The crystal Ba18Zn21Ga6S48 is a type I phase matching non-linear optical material, in a particle size range of 150˜210 μm, its powder frequency doubling intensity and the laser damage threshold are respectively 0.5 times and 28 times those of the commercial material AgGaS2. Other crystals have the same or similar structure and properties such as optical property. The infrared non-linear optical crystal of the present application has important prospects in military and civilian applications, and can be used in electro-optical countermeasures, resource detection, space antimissile and communications, etc.
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公开(公告)号：US10062568B2
公开(公告)日：2018-08-28
申请号：US15587551
申请日：2017-05-05
CPC分类号： H01L21/02568 , B82Y40/00 , C01B19/002 , C01B19/007 , C23C16/305 , C23C16/46 , C30B29/46 , C30B29/60 , H01L21/0262
摘要： A method of synthesis of two-dimensional metal chalcogenide monolayers, such as WSe2 and MoSe2, is based on a chemical vapor deposition approach that uses H2Se or alkyl or aryl selenide precursors to form a reactive gas. The gaseous selenium precursor may be introduced into a tube furnace containing a metal precursor at a selected temperature, wherein the selenium and metal precursors react to form metal chalcogenide monolayers.
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公开(公告)号：US20180222767A1
公开(公告)日：2018-08-09
申请号：US15455350
申请日：2017-03-10
申请人： University of Kansas
CPC分类号： C01G49/12 , C01P2002/82 , C01P2002/84 , C01P2004/03 , C01P2004/04 , C01P2004/16 , C01P2004/24 , C01P2004/50 , C01P2006/40 , C23C16/305 , C23C16/4417 , C25B1/00 , C25B1/04 , C25B3/04 , C25B11/04 , C30B7/14 , C30B29/46 , C30B29/60 , H01M4/90 , Y02E60/366
摘要： Electrodes are provided comprising a FeS2 electrocatalytic material, the FeS2 electrocatalytic material comprising FeS2 nanostructures in the form of FeS2 wires, FeS2 discs, or both, wherein the FeS2 wires and the FeS2 discs are hyperthin having a thickness in the range of from about the thickness of a monolayer of FeS2 molecules to about 20 nm. The FeS2 nanostructures may be polycrystalline comprising a non-pyrite majority crystalline phase. The FeS2 nanostructures may be in the form of FeS2 discs wherein substantially all the FeS2 discs have at least partially curved edges.
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公开(公告)号：US20180087187A1
公开(公告)日：2018-03-29
申请号：US15642406
申请日：2017-07-06
发明人： KE-NAN ZHANG , MING-ZHE YAN , SHU-YUN ZHOU , YANG WU , SHOU-SHAN FAN
CPC分类号： C30B29/46 , C01B19/007 , C01P2006/42 , C30B9/06 , C30B25/00
摘要： The disclosure relates to a semimetal compound of Pt and a method for making the same. The semimetal compound is a single crystal material of PtSe2. The method comprises: providing a PtSe2 polycrystalline material; placing the PtSe2 polycrystalline material in a reacting chamber; placing chemical transport medium in the reacting chamber; evacuating the reacting chamber to be vacuum less than 10 Pa; placing the reacting chamber at a temperature gradient, wherein the reacting chamber has a first end at a temperature of 1200 degrees Celsius to 1000 degrees Celsius and a second end opposite to the first end and at a temperature of 1000 degrees Celsius to 900 degrees Celsius; and keeping the reacting chamber in the temperature gradient for 10 days to 30 days.
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公开(公告)号：US20180072947A1
公开(公告)日：2018-03-15
申请号：US15698835
申请日：2017-09-08
发明人： Nigel Pickett , Ombretta Masala
CPC分类号： C09K11/681 , B82Y10/00 , B82Y20/00 , B82Y30/00 , B82Y40/00 , C01B19/00 , C01B19/007 , C01G39/06 , C01P2002/82 , C01P2004/24 , C01P2006/60 , C09K11/06 , C09K2211/1007 , C09K2211/188 , C30B7/14 , C30B29/46 , C30B33/00 , H01L21/02568 , H01L21/02601 , H01L21/02628 , Y10S977/774 , Y10S977/827 , Y10S977/896 , Y10S977/90 , Y10S977/95
摘要： A method of synthesizing two-dimensional (2D) nanoparticles of transition metal dichalcogenide (TMDC) material utilises a molecular cluster compound. The method allows a high degree of control over the shape, size and composition of the 2D TMDC nanoparticles, and may be used to produce material with uniform properties in large quantities.
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公开(公告)号：US20180006252A1
公开(公告)日：2018-01-04
申请号：US15613182
申请日：2017-06-03
发明人： JIN ZHANG , YANG WEI , KAI-LI JIANG , SHOU-SHAN FAN
IPC分类号： H01L51/05 , H01L51/42 , H01L51/00 , B82Y20/00 , B82Y10/00 , B82Y40/00 , C30B33/00 , C30B29/46
CPC分类号： H01L51/0562 , B82Y10/00 , B82Y20/00 , B82Y30/00 , B82Y40/00 , C30B29/46 , C30B33/00 , H01L27/30 , H01L51/0012 , H01L51/0026 , H01L51/0048 , H01L51/4213 , Y10S977/75 , Y10S977/827 , Y10S977/842 , Y10S977/938 , Y10S977/954
摘要： The present disclosure relates to a nano-scale transistor. The nano-scale transistor includes a source electrode, a drain electrode, a gate electrode and a nano-heterostructure. The nano-heterostructure is electrically coupled with the source electrode and the drain electrode. The gate electrode is insulated from the nano-heterostructure, the source electrode and the drain electrode via an insulating layer. The nano-heterostructure includes a first carbon nanotube, a second carbon nanotube and a semiconductor layer. The semiconductor layer includes a first surface and a second surface opposite to the first surface. The first carbon nanotube is located on the first surface, the second carbon nanotube is located on the second surface.
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