公开(公告)号：US08604447B2

公开(公告)日：2013-12-10

申请号：US13557047

申请日：2012-07-24

申请人： Scott Young ,  Guoheng Zhao ,  Ady Levy ,  Marco Guevremont ,  Neeraj Khanna

发明人： Scott Young ,  Guoheng Zhao ,  Ady Levy ,  Marco Guevremont ,  Neeraj Khanna

IPC分类号： G01N21/64

CPC分类号： G01N21/6489 ,  G01N21/9501 ,  H02S50/10

摘要： Methods and apparatus are presented to measure the photoluminescence of incoming wafers and extract parameters such as minority carrier life time, diffusion length, and defect density that may be used to predict final solar cell efficiency. In some examples, illumination light is supplied to a side of an as-cut silicon wafer and the induced luminescence measured from the same side and the opposite side of the wafer is used to determine an indication of the minority carrier lifetime. In another example, the luminescence induced by two instances of illumination light of different wavelength is used to determine an indication of the minority carrier lifetime. In another example, the spatial distribution of luminescence intensity over an area surrounding a focused illumination spot is used to determine an indication of the minority carrier lifetime. Other apparatus useful to passivate the surface of a wafer for inspection are also presented.

摘要翻译： 提出了测量进入晶片的光致发光的方法和装置，并提取可用于预测最终太阳能电池效率的参数，例如少数载流子寿命，扩散长度和缺陷密度。 在一些示例中，将照明光提供给切割硅晶片的一侧，并且使用从晶片的相同侧和相对侧测量的感应发光来确定少数载流子寿命的指示。 在另一示例中，由两个不同波长的照明光实例引起的发光用于确定少数载流子寿命的指示。 在另一示例中，使用聚焦照明点周围的区域上的发光强度的空间分布来确定少数载流子寿命的指示。 还提出了可用于钝化晶片表面以进行检查的其它装置。

公开(公告)号：US20130048873A1

公开(公告)日：2013-02-28

申请号：US13557047

申请日：2012-07-24

申请人： Scott Young ,  Guoheng Zhao ,  Ady Levy ,  Marco Guevremont ,  Neeraj Khanna

发明人： Scott Young ,  Guoheng Zhao ,  Ady Levy ,  Marco Guevremont ,  Neeraj Khanna

IPC分类号： G01N21/64

CPC分类号： G01N21/6489 ,  G01N21/9501 ,  H02S50/10

摘要： Methods and apparatus are presented to measure the photoluminescence of incoming wafers and extract parameters such as minority carrier life time, diffusion length, and defect density that may be used to predict final solar cell efficiency. In some examples, illumination light is supplied to a side of an as-cut silicon wafer and the induced luminescence measured from the same side and the opposite side of the wafer is used to determine an indication of the minority carrier lifetime. In another example, the luminescence induced by two instances of illumination light of different wavelength is used to determine an indication of the minority carrier lifetime. In another example, the spatial distribution of luminescence intensity over an area surrounding a focused illumination spot is used to determine an indication of the minority carrier lifetime. Other apparatus useful to passivate the surface of a wafer for inspection are also presented.

摘要翻译： 提出了测量进入晶片的光致发光的方法和装置，并提取可用于预测最终太阳能电池效率的参数，例如少数载流子寿命，扩散长度和缺陷密度。 在一些示例中，将照明光提供给切割硅晶片的一侧，并且使用从晶片的相同侧和相对侧测量的感应发光来确定少数载流子寿命的指示。 在另一示例中，由两个不同波长的照明光实例引起的发光用于确定少数载流子寿命的指示。 在另一示例中，使用聚焦照明点周围的区域上的发光强度的空间分布来确定少数载流子寿命的指示。 还提出了可用于钝化晶片表面以进行检查的其它装置。