利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

2 条记录 (耗时 0.02 秒)

    Method for manufacturing semiconductor memory device using hemispherical grain silicon
    1.
    发明授权
    Method for manufacturing semiconductor memory device using hemispherical grain silicon 有权
    使用半球晶硅制造半导体存储器件的方法

    公开(公告)号：US06723601B2

    公开(公告)日：2004-04-20

    申请号：US10321815

    申请日：2002-12-18

    申请人： Se-Min Lee ,  Dong-Hwan Kim ,  Keun-Il Lee

    发明人： Se-Min Lee ,  Dong-Hwan Kim ,  Keun-Il Lee

    IPC分类号： H01L218242

    CPC分类号： H01L28/91 ,  H01L27/10852 ,  H01L28/84 ,  Y10S257/905

    摘要： A semiconductor device for use in a memory cell including an active matrix provided with a silicon substrate, at least one transistor formed on the silicon substrate, a number of bottom electrodes formed over the transistors, a plurality of conductive plugs to electrically connect the bottom electrodes to the transistors, respectively, and an insulating layer formed around the conductive plugs. In the device, by carrying out a carbon treatment to top surface portions of the bottom electrode structure, it is possible to secure enough space to prevent the formation of bridges between the bottom electrodes.

    摘要翻译： 一种用于存储单元的半导体器件，包括设置有硅衬底的有源矩阵，形成在硅衬底上的至少一个晶体管，形成在晶体管上方的多个底部电极，多个导电插头，用于电连接底部电极 并分别形成在导电插塞周围形成的绝缘层。 在该装置中，通过对底部电极结构的顶面部分进行碳处理，可以确保足够的空间以防止在底部电极之间形成桥。

    Semiconductor memory device using hemispherical grain silicon for bottom electrodes
    2.
    发明授权
    Semiconductor memory device using hemispherical grain silicon for bottom electrodes 有权
    半导体存储器件使用半球形晶粒硅作底层电极

    公开(公告)号：US06518612B2

    公开(公告)日：2003-02-11

    申请号：US09739886

    申请日：2000-12-20

    申请人： Se-Min Lee ,  Dong-Hwan Kim ,  Keun-Il Lee

    发明人： Se-Min Lee ,  Dong-Hwan Kim ,  Keun-Il Lee

    IPC分类号： H01L27108

    CPC分类号： H01L28/91 ,  H01L27/10852 ,  H01L28/84 ,  Y10S257/905

    摘要： A semiconductor device for use in a memory cell including an active matrix provided with a silicon substrate, at least one transistor formed on the silicon substrate, a number of bottom electrodes formed over the transistors, a plurality of conductive plugs to electrically connect the bottom electrodes to the transistors, respectively, and an insulating layer formed around the conductive plugs. In the device, by carrying out a carbon treatment to top surface portions of the bottom electrode structure, it is possible to secure enough space to prevent the formation of bridges between the bottom electrodes.

    摘要翻译： 一种用于存储单元的半导体器件，包括设置有硅衬底的有源矩阵，形成在硅衬底上的至少一个晶体管，形成在晶体管上方的多个底部电极，多个导电插头，用于电连接底部电极 并分别形成在导电插塞周围形成的绝缘层。 在该装置中，通过对底部电极结构的顶面部分进行碳处理，可以确保足够的空间以防止在底部电极之间形成桥。