公开(公告)号：US20070054477A1

公开(公告)日：2007-03-08

申请号：US11506723

申请日：2006-08-18

Applicant: Dong-byum Kim ,  Se-jin Chung

Inventor： Dong-byum Kim ,  Se-jin Chung

IPC: H01L21/20

CPC classification number: H01L21/02686 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/2026 ,  H01L27/1285 ,  H01L29/045

Abstract: Provided are a method of forming a polycrystalline silicon thin film with improved electrical characteristics and a method of manufacturing a thin film transistor using the method of forming the polycrystalline silicon thin film. The method includes forming an amorphous silicon thin film on a substrate, partially melting a portion of the amorphous silicon thin film by irradiating the portion of the amorphous silicon thin film with a laser beam having a low energy density, forming polycrystalline silicon grains with a predetermined crystalline arrangement by crystallizing the partially molten portion of the amorphous silicon thin film, completely melting a portion of the polycrystalline silicon grains and a portion of the amorphous silicon thin film by irradiation of a laser beam having a high energy density while repeatedly moving the substrate by a predetermined distance, and growing the polycrystalline silicon grains by crystallizing the completely molten silicon homogeneously with the predetermined crystalline arrangement.

Abstract translation: 提供一种形成具有改善的电特性的多晶硅薄膜的方法和使用形成多晶硅薄膜的方法制造薄膜晶体管的方法。 该方法包括在衬底上形成非晶硅薄膜，通过用具有低能量密度的激光束照射非晶硅薄膜的一部分来部分地熔化非晶硅薄膜的一部分，形成具有预定的多晶硅晶粒的多晶硅晶粒 通过使非晶硅薄膜的部分熔融部分结晶，通过照射具有高能量密度的激光束将多晶硅晶粒的一部分和非晶硅薄膜的一部分完全熔化，同时通过 预定距离，并且通过使预定结晶布置均匀地结晶完全熔融的硅而生长多晶硅晶粒。

公开(公告)号：US07985665B2

公开(公告)日：2011-07-26

申请号：US12045932

申请日：2008-03-11

Applicant: Dong-byum Kim ,  Se-jin Chung

Inventor： Dong-byum Kim ,  Se-jin Chung

IPC: H01L21/20 ,  H01L21/36

CPC classification number: H01L21/02686 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/2026 ,  H01L27/1285 ,  H01L29/045

Abstract: Provided is a method of forming a polycrystalline silicon thin film with improved electrical characteristics. The method includes forming an amorphous silicon thin film on a substrate, partially melting a portion of the amorphous silicon thin film by irradiating the portion of the amorphous silicon thin film with a laser beam having a low energy density, forming polycrystalline silicon grains with a predetermined crystalline arrangement by crystallizing the partially molten portion of the amorphous silicon thin film, completely melting a portion of the polycrystalline silicon grains and a portion of the amorphous silicon thin film by irradiation of a laser beam having a high energy density while repeatedly moving the substrate by a predetermined distance, and growing the polycrystalline silicon grains by crystallizing the completely molten silicon homogeneously with the predetermined crystalline arrangement.

Abstract translation: 提供一种形成具有改善的电特性的多晶硅薄膜的方法。 该方法包括在衬底上形成非晶硅薄膜，通过用具有低能量密度的激光束照射非晶硅薄膜的一部分来部分地熔化非晶硅薄膜的一部分，形成具有预定的多晶硅晶粒的多晶硅晶粒 通过使非晶硅薄膜的部分熔融部分结晶，通过照射具有高能量密度的激光束将多晶硅晶粒的一部分和非晶硅薄膜的一部分完全熔化，同时通过 预定距离，并且通过使预定结晶布置均匀地结晶完全熔融的硅而生长多晶硅晶粒。

公开(公告)号：US07364992B2

公开(公告)日：2008-04-29

申请号：US11506723

申请日：2006-08-18

Applicant: Dong-byum Kim ,  Se-jin Chung

Inventor： Dong-byum Kim ,  Se-jin Chung

IPC: H01L21/20

CPC classification number: H01L21/02686 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/2026 ,  H01L27/1285 ,  H01L29/045

Abstract: A method of forming a polycrystalline silicon thin film with improved electrical characteristics and a method of manufacturing a thin film transistor using the method of forming the polycrystalline silicon thin film. The method includes forming an amorphous silicon thin film on a substrate, partially melting a portion of the amorphous silicon thin film by irradiating the portion of the amorphous silicon thin film with a laser beam having a low energy density, forming polycrystalline silicon grains with a predetermined crystalline arrangement by crystallizing the partially molten portion of the amorphous silicon thin film, completely melting a portion of the polycrystalline silicon grains and a portion of the amorphous silicon thin film by irradiation of a laser beam having a high energy density while repeatedly moving the substrate by a predetermined distance, and growing the polycrystalline silicon grains by crystallizing the completely molten silicon homogeneously with the predetermined crystalline arrangement.

Abstract translation: 一种形成具有改善的电特性的多晶硅薄膜的方法和使用形成多晶硅薄膜的方法制造薄膜晶体管的方法。 该方法包括在衬底上形成非晶硅薄膜，通过用具有低能量密度的激光束照射非晶硅薄膜的一部分来部分地熔化非晶硅薄膜的一部分，形成具有预定的多晶硅晶粒的多晶硅晶粒 通过使非晶硅薄膜的部分熔融部分结晶，通过照射具有高能量密度的激光束将多晶硅晶粒的一部分和非晶硅薄膜的一部分完全熔化，同时通过 预定距离，并且通过使预定结晶布置均匀地结晶完全熔融的硅而生长多晶硅晶粒。

公开(公告)号：US20060211181A1

公开(公告)日：2006-09-21

申请号：US11378861

申请日：2006-03-17

Applicant: Se-jin Chung

Inventor： Se-jin Chung

IPC: H01L21/84 ,  H01L21/00

CPC classification number: H01L27/1285 ,  H01L29/78672

Abstract: Provided are a method of manufacturing a polysilicon thin film transistor plate, which includes leveling the surface of crystallized polysilicon having protruding grains at grain boundaries to improve the electrical characteristics of an active layer, and a liquid crystal display including a polysilicon thin film transistor plate manufactured by the method. The method of manufacturing a polysilicon thin film transistor plate includes loading a substrate on which polysilicon grains are formed, removing protruding grains at grain boundaries among the polysilicon grains by chemical mechanical polishing (“CMP”) and forming a polished substrate, cleaning the polished substrate and forming a cleaned substrate, and unloading the cleaned substrate.

Abstract translation: 提供一种制造多晶硅薄膜晶体管板的方法，其包括使晶界处具有突出晶粒的晶化多晶硅的表面平整以提高有源层的电特性，以及液晶显示器，其包括制造的多晶硅薄膜晶体管板 通过该方法。 制造多晶硅薄膜晶体管板的方法包括加载其上形成多晶硅颗粒的衬底，通过化学机械抛光（“CMP”）去除多晶硅晶粒之间的晶界处的突出晶粒并形成抛光衬底，清洁抛光衬底 并且形成清洁的基板，并且卸​​载被清洁的基板。

公开(公告)号：US07829245B2

公开(公告)日：2010-11-09

申请号：US11499477

申请日：2006-08-04

Applicant: Se-jin Chung ,  Dong-bum Kim

Inventor： Se-jin Chung ,  Dong-bum Kim

IPC: G03F1/00

CPC classification number: G03F1/54 ,  B23K26/066 ,  H01L21/02532 ,  H01L21/0268

Abstract: A mask for sequential lateral solidification capable of preventing pattern deformation that may be caused by laser beam, and a method of manufacturing the same are provided. The mask includes a transparent substrate, and a heat-resistant oxide film pattern, disposed on the transparent substrate, blocking a laser beam.

Abstract translation: 提供了能够防止可能由激光束引起的图案变形的顺序侧向凝固的掩模及其制造方法。 掩模包括设置在透明基板上的透明基板和耐热氧化膜图案，其阻挡激光束。

公开(公告)号：US20080213985A1

公开(公告)日：2008-09-04

申请号：US12045932

申请日：2008-03-11

Applicant: Dong-byum Kim ,  Se-jin Chung

Inventor： Dong-byum Kim ,  Se-jin Chung

IPC: H01L21/20

CPC classification number: H01L21/02686 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/2026 ,  H01L27/1285 ,  H01L29/045

Abstract: Provided is a method of forming a polycrystalline silicon thin film with improved electrical characteristics. The method includes forming an amorphous silicon thin film on a substrate, partially melting a portion of the amorphous silicon thin film by irradiating the portion of the amorphous silicon thin film with a laser beam having a low energy density, forming polycrystalline silicon grains with a predetermined crystalline arrangement by crystallizing the partially molten portion of the amorphous silicon thin film, completely melting a portion of the polycrystalline silicon grains and a portion of the amorphous silicon thin film by irradiation of a laser beam having a high energy density while repeatedly moving the substrate by a predetermined distance, and growing the polycrystalline silicon grains by crystallizing the completely molten silicon homogeneously with the predetermined crystalline arrangement.

Abstract translation: 提供一种形成具有改善的电特性的多晶硅薄膜的方法。 该方法包括在衬底上形成非晶硅薄膜，通过用具有低能量密度的激光束照射非晶硅薄膜的一部分来部分地熔化非晶硅薄膜的一部分，形成具有预定的多晶硅晶粒的多晶硅晶粒 通过使非晶硅薄膜的部分熔融部分结晶，通过照射具有高能量密度的激光束将多晶硅晶粒的一部分和非晶硅薄膜的一部分完全熔化，同时通过 预定距离，并且通过使预定结晶布置均匀地结晶完全熔融的硅而生长多晶硅晶粒。

公开(公告)号：US20070032050A1

公开(公告)日：2007-02-08

申请号：US11499477

申请日：2006-08-04

Applicant: Se-jin Chung ,  Dong-bum Kim

Inventor： Se-jin Chung ,  Dong-bum Kim

IPC: H01L21/20

CPC classification number: G03F1/54 ,  B23K26/066 ,  H01L21/02532 ,  H01L21/0268

Abstract: A mask for sequential lateral solidification capable of preventing pattern deformation that may be caused by laser beam, and a method of manufacturing the same are provided. The mask includes a transparent substrate, and a heat-resistant oxide film pattern, disposed on the transparent substrate, blocking a laser beam.

Abstract translation: 提供了能够防止可能由激光束引起的图案变形的顺序侧向凝固的掩模及其制造方法。 掩模包括设置在透明基板上的透明基板和耐热氧化膜图案，其阻挡激光束。