公开(公告)号：US09286917B1

公开(公告)日：2016-03-15

申请号：US14701187

申请日：2015-04-30

Applicant: Seagate Technology LLC

Inventor： Venkateswara R. Inturi ,  Aly A. Bazama ,  Yong Luo ,  Joseph M. Mundenar

IPC: G11B5/147

CPC classification number: G11B5/147 ,  G11B5/1278 ,  G11B5/187 ,  G11B5/232 ,  G11B5/3116 ,  G11B5/315 ,  G11B5/3163

Abstract: A write pole may be formed by first depositing a dielectric layer onto a substrate and then patterning the dielectric layer to form a trench with a write pole shape. The trench is subsequently filled with the evaporation deposition of a magnetic material to form a write pole. The trench may have a greater depth dimension than width dimension.

Abstract translation: 可以通过首先将介电层沉积到衬底上，然后对介电层进行构图以形成具有写极形状的沟槽来形成写入极。 随后填充有磁性材料的蒸发沉积以形成写入极。 沟槽可以具有比宽度尺寸更大的深度尺寸。